skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Impact of laser anneal on NiPt silicide texture and chemical composition

Abstract

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

Authors:
ORCiD logo; ; ; ORCiD logo; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1409558
Report Number(s):
BNL-114610-2017-JA¿¿¿
Journal ID: ISSN 0021-8979
DOE Contract Number:  
SC0012704
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal Issue: 22; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Feautrier, C., Ozcan, A. S., Lavoie, C., Valery, A., Beneyton, R., Borowiak, C., Clément, L., Pofelski, A., and Salem, B. Impact of laser anneal on NiPt silicide texture and chemical composition. United States: N. p., 2017. Web. doi:10.1063/1.4985279.
Feautrier, C., Ozcan, A. S., Lavoie, C., Valery, A., Beneyton, R., Borowiak, C., Clément, L., Pofelski, A., & Salem, B. Impact of laser anneal on NiPt silicide texture and chemical composition. United States. doi:10.1063/1.4985279.
Feautrier, C., Ozcan, A. S., Lavoie, C., Valery, A., Beneyton, R., Borowiak, C., Clément, L., Pofelski, A., and Salem, B. Wed . "Impact of laser anneal on NiPt silicide texture and chemical composition". United States. doi:10.1063/1.4985279.
@article{osti_1409558,
title = {Impact of laser anneal on NiPt silicide texture and chemical composition},
author = {Feautrier, C. and Ozcan, A. S. and Lavoie, C. and Valery, A. and Beneyton, R. and Borowiak, C. and Clément, L. and Pofelski, A. and Salem, B.},
abstractNote = {We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.},
doi = {10.1063/1.4985279},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 22,
volume = 121,
place = {United States},
year = {2017},
month = {6}
}

Works referenced in this record:

NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains
journal, March 2015

  • Mizuo, Mariko; Yamaguchi, Tadashi; Pagès, Xavier
  • Japanese Journal of Applied Physics, Vol. 54, Issue 4S
  • DOI: 10.7567/JJAP.54.04DA09

Height-resolved quantification of microstructure and texture in polycrystalline thin films using TEM orientation mapping
journal, December 2015



journal, July 2007


Dealing With Multiple Grains in TEM Lamellae Thickness for Microstructure Analysis Using Scanning Precession Electron Diffraction
journal, August 2015


Grain detection from 2d and 3d EBSD data—Specification of the MTEX algorithm
journal, December 2011


Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition
journal, September 1999

  • Mangelinck, D.; Dai, J. Y.; Pan, J. S.
  • Applied Physics Letters, Vol. 75, Issue 12
  • DOI: 10.1063/1.124803

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node
journal, June 2013

  • Zhang, Zhen; Koswatta, Siyuranga Obasa; Bedell, Stephen W.
  • IEEE Electron Device Letters, Vol. 34, Issue 6
  • DOI: 10.1109/LED.2013.2257664

Towards implementation of a nickel silicide process for CMOS technologies
journal, November 2003


Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni(10at.% Pt) film with Si(100) substrate
journal, May 2014


Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance
journal, May 2010

  • Gaudet, S.; Coia, C.; Desjardins, P.
  • Journal of Applied Physics, Vol. 107, Issue 9
  • DOI: 10.1063/1.3327451

Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)
journal, April 2013

  • Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean
  • Applied Physics Letters, Vol. 102, Issue 17
  • DOI: 10.1063/1.4801928

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe
journal, April 2016

  • Ozcan, Ahmet S.; Lavoie, Christian; Alptekin, Emre
  • Journal of Applied Physics, Vol. 119, Issue 15
  • DOI: 10.1063/1.4947054

Thermal expansion of the isostructural PtSi and NiSi: Negative expansion coefficient in NiSi and stress effects in thin films
journal, March 2003

  • Detavernier, C.; Lavoie, C.; d’Heurle, F. M.
  • Journal of Applied Physics, Vol. 93, Issue 5
  • DOI: 10.1063/1.1545156

Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films
journal, November 2006


Dopant diffusivity and solubility in nickel silicides
journal, January 2011

  • Blum, Ivan; Portavoce, Alain; Hoummada, Khalid
  • physica status solidi (c), Vol. 8, Issue 3
  • DOI: 10.1002/pssc.201000283

Three dimensional reciprocal space measurement by x-ray diffraction using linear and area detectors: Applications to texture and defects determination in oriented thin films and nanoprecipitates
journal, March 2013

  • Gaudet, Simon; De Keyser, Koen; Lambert-Milot, Samuel
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 2
  • DOI: 10.1116/1.4789984

Influence of Pt addition on the texture of NiSi on Si(001)
journal, May 2004

  • Detavernier, C.; Lavoie, C.
  • Applied Physics Letters, Vol. 84, Issue 18
  • DOI: 10.1063/1.1719276

Texture Analysis with MTEX – Free and Open Source Software Toolbox
journal, February 2010


Texture transition in Cu thin films: Electron backscatter diffraction vs. X-ray diffraction
journal, September 2006


Orientation and Phase Mapping in TEM Microscopy (EBSD-TEM Like): Applications to Materials Science
journal, March 2012


The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation
journal, December 2011

  • Gaudet, S.; Desjardins, P.; Lavoie, C.
  • Journal of Applied Physics, Vol. 110, Issue 11
  • DOI: 10.1063/1.3662110

Automated crystal orientation and phase mapping in TEM
journal, December 2014


Pt redistribution during Ni(Pt) silicide formation
journal, December 2008

  • Demeulemeester, J.; Smeets, D.; Van Bockstael, C.
  • Applied Physics Letters, Vol. 93, Issue 26
  • DOI: 10.1063/1.3058719

Role of the early stages of Ni-Si interaction on the structural properties of the reaction products
journal, September 2013

  • Alberti, Alessandra; La Magna, Antonino
  • Journal of Applied Physics, Vol. 114, Issue 12
  • DOI: 10.1063/1.4818630

Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)
journal, May 1985


Texture in thin film silicides and germanides: A review
journal, September 2016

  • De Schutter, B.; De Keyser, K.; Lavoie, C.
  • Applied Physics Reviews, Vol. 3, Issue 3
  • DOI: 10.1063/1.4960122

Challenges of nickel silicidation in CMOS technologies
journal, April 2015


An off-normal fibre-like texture in thin films on single-crystal substrates
journal, December 2003

  • Detavernier, C.; Özcan, A. S.; Jordan-Sweet, J.
  • Nature, Vol. 426, Issue 6967
  • DOI: 10.1038/nature02198

Texture characterization of the NiSi film on Si substrate
journal, June 2013