Sputter-deposited WOx and MoOx for hole selective contacts

Bivour, Martin; Zähringer, Florian; Ndione, Paul F.; Hermle, Martin

doi:10.1016/j.egypro.2017.09.259

Title: Sputter-deposited WO_x and MoO_x for hole selective contacts

Journal Article · Thu Sep 21 00:00:00 EDT 2017 · Energy Procedia (Online)

DOI:https://doi.org/10.1016/j.egypro.2017.09.259· OSTI ID:1408996

Bivour, Martin ^[1]; Zähringer, Florian ^[1]; Ndione, Paul F. ^[2]; Hermle, Martin ^[1]

Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany)
Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany); National Renewable Energy Lab. (NREL), Golden, CO (United States)

Here, reactive sputter deposited tungsten and molybdenum oxide (WO_x, MoO_x) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films deposited by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WO_x and MoO_x towards higher work functions to improve the hole selectivity.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: German Federal Ministry for Economic Affairs and Energy; USDOE

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1408996

Report Number(s):: NREL/JA-5J00-70502

Journal Information:: Energy Procedia (Online), Vol. 124, Issue C; ISSN 1876-6102

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 29 works

Citation information provided by
Web of Science

References (18)

Interface investigation and engineering – achieving high performance polymer photovoltaic devices Chen, Li-Min; Xu, Zheng; Hong, Ziruo Journal of Materials Chemistry, Vol. 20, Issue 13, p. 2575-2598 https://doi.org/10.1039/b925382c	journal	January 2010
Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications Meyer, Jens; Hamwi, Sami; Kröger, Michael Advanced Materials, Vol. 24, Issue 40 https://doi.org/10.1002/adma.201201630	journal	August 2012
Towards a high efficiency amorphous silicon solar cell using molybdenum oxide as a window layer instead of conventional p-type amorphous silicon carbide Il Park, Sang; Jae Baik, Seung; Im, Jong-San Applied Physics Letters, Vol. 99, Issue 6 https://doi.org/10.1063/1.3624591	journal	August 2011
Numerical Analysis of Electrical TCO / a-Si:H(p) Contact Properties for Silicon Heterojunction Solar Cells Bivour, Martin; Schröer, Sebastian; Hermle, Martin Energy Procedia, Vol. 38 https://doi.org/10.1016/j.egypro.2013.07.330	journal	January 2013
Hole Selective MoO _x Contact for Silicon Solar Cells Battaglia, Corsin; Yin, Xingtian; Zheng, Maxwell Nano Letters, Vol. 14, Issue 2 https://doi.org/10.1021/nl404389u	journal	January 2014
Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells Bivour, Martin; Temmler, Jan; Steinkemper, Heiko Solar Energy Materials and Solar Cells, Vol. 142 https://doi.org/10.1016/j.solmat.2015.05.031	journal	November 2015
Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells Gerling, Luis G.; Mahato, Somnath; Morales-Vilches, Anna Solar Energy Materials and Solar Cells, Vol. 145 https://doi.org/10.1016/j.solmat.2015.08.028	journal	February 2016
Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment Klein, Andreas; Körber, Christoph; Wachau, André Materials, Vol. 3, Issue 11 https://doi.org/10.3390/ma3114892	journal	November 2010
TCO work function related transport losses at the a-Si:H/TCO-contact in SHJ solar cells Ritzau, Kurt-Ulrich; Bivour, Martin; Schröer, Sebastian Solar Energy Materials and Solar Cells, Vol. 131 https://doi.org/10.1016/j.solmat.2014.06.026	journal	December 2014
Doped Layer Optimization for Silicon Heterojunctions by Injection-Level-Dependent Open-Circuit Voltage Measurements Bivour, M.; Reusch, M.; Schroer, S. IEEE Journal of Photovoltaics, Vol. 4, Issue 2 https://doi.org/10.1109/JPHOTOV.2013.2294757	journal	March 2014
Determination of surface properties by means of large signal photovoltage pulses and the influence of trapping Heilig, K. Surface Science, Vol. 44, Issue 2 https://doi.org/10.1016/0039-6028(74)90128-9	journal	August 1974
Review of conductor-insulator-semiconductor (CIS) solar cells Singh, R.; Green, M. A.; Rajkanan, K. Solar Cells, Vol. 3, Issue 2 https://doi.org/10.1016/0379-6787(81)90088-0	journal	March 1981
Band offsets, Schottky barrier heights, and their effects on electronic devices Robertson, John Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5 https://doi.org/10.1116/1.4818426	journal	September 2013
Charge Carrier Separation in Solar Cells Wurfel, Uli; Cuevas, Andres; Wurfel, Peter IEEE Journal of Photovoltaics, Vol. 5, Issue 1 https://doi.org/10.1109/JPHOTOV.2014.2363550	journal	January 2015
Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering Demaurex, Bénédicte; De Wolf, Stefaan; Descoeudres, Antoine Applied Physics Letters, Vol. 101, Issue 17 https://doi.org/10.1063/1.4764529	journal	October 2012
Atomic Layer Deposited Molybdenum Oxide for the Hole-selective Contact of Silicon Solar Cells Bivour, Martin; Macco, Bart; Temmler, Jan Energy Procedia, Vol. 92 https://doi.org/10.1016/j.egypro.2016.07.125	journal	August 2016
Oxygen vacancies in tungsten oxide and their influence on tungsten oxide/silicon heterojunction solar cells Mews, Mathias; Korte, Lars; Rech, Bernd Solar Energy Materials and Solar Cells, Vol. 158 https://doi.org/10.1016/j.solmat.2016.05.042	journal	December 2016
Improving the a-Si:H(p) rear emitter contact of n-type silicon solar cells Bivour, Martin; Reichel, Christian; Hermle, Martin Solar Energy Materials and Solar Cells, Vol. 106 https://doi.org/10.1016/j.solmat.2012.06.036	journal	November 2012

Cited By (2)

Requirements for efficient hole extraction in transition metal oxide-based silicon heterojunction solar cells Messmer, Christoph; Bivour, Martin; Schön, Jonas Journal of Applied Physics, Vol. 124, Issue 8 https://doi.org/10.1063/1.5045250	journal	August 2018
Kinetic Monte Carlo simulation of transport in amorphous silicon passivation layers in silicon heterojunction solar cells Muralidharan, Pradyumna; Goodnick, Stephen M.; Vasileska, Dragica Journal of Computational Electronics, Vol. 18, Issue 4 https://doi.org/10.1007/s10825-019-01379-3	journal	July 2019

Similar Records

Studies of polycrystalline WO{sub 3} and MoO{sub 3} coatings prepared by chemical vapor deposition

Book · Mon Dec 31 00:00:00 EST 1990 · OSTI ID:1408996

Donnadieu, A

Molybdenum oxide MoO{sub x}: A versatile hole contact for silicon solar cells

Journal Article · Mon Dec 08 00:00:00 EST 2014 · Applied Physics Letters · OSTI ID:1408996

Bullock, James; Cuevas, Andres; Allen, Thomas; +1 more

The Molybdenum(V) and Tungsten(VI) Oxoazides [MoO(N ₃ ) ₃ ], [MoO(N ₃ ) ₃ ⋅2 CH ₃ CN], [(bipy)MoO(N ₃ ) ₃ ], [MoO(N ₃ ) ₅ ] ²⁻ , [WO(N ₃ ) ₄ ], and [WO(N ₃ ) ₄ ⋅CH ₃ CN]

Journal Article · Mon Nov 02 00:00:00 EST 2015 · Angewandte Chemie (International Edition) · OSTI ID:1408996

Haiges, Ralf; Skotnitzki, Juri; Fang, Zongtang; +2 more

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
metal oxide
work function
induced junction
sputtering

Title: Sputter-deposited WOx and MoOx for hole selective contacts

Citation Formats

References (18)

Cited By (2)

Similar Records

Related Subjects

Title: Sputter-deposited WO_x and MoO_x for hole selective contacts