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Title: Sputter-deposited WO x and MoO x for hole selective contacts

Abstract

Here, reactive sputter deposited tungsten and molybdenum oxide (WO x, MoO x) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films deposited by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WO x and MoO x towards higher work functions to improve the hole selectivity.

Authors:
 [1];  [1];  [2];  [1]
  1. Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany)
  2. Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
German Federal Ministry for Economic Affairs and Energy; USDOE
OSTI Identifier:
1408996
Report Number(s):
NREL/JA-5J00-70502
Journal ID: ISSN 1876-6102
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Energy Procedia
Additional Journal Information:
Journal Volume: 124; Journal Issue: C; Journal ID: ISSN 1876-6102
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; metal oxide; work function; induced junction; sputtering

Citation Formats

Bivour, Martin, Zähringer, Florian, Ndione, Paul F., and Hermle, Martin. Sputter-deposited WOx and MoOx for hole selective contacts. United States: N. p., 2017. Web. doi:10.1016/j.egypro.2017.09.259.
Bivour, Martin, Zähringer, Florian, Ndione, Paul F., & Hermle, Martin. Sputter-deposited WOx and MoOx for hole selective contacts. United States. doi:10.1016/j.egypro.2017.09.259.
Bivour, Martin, Zähringer, Florian, Ndione, Paul F., and Hermle, Martin. Thu . "Sputter-deposited WOx and MoOx for hole selective contacts". United States. doi:10.1016/j.egypro.2017.09.259. https://www.osti.gov/servlets/purl/1408996.
@article{osti_1408996,
title = {Sputter-deposited WOx and MoOx for hole selective contacts},
author = {Bivour, Martin and Zähringer, Florian and Ndione, Paul F. and Hermle, Martin},
abstractNote = {Here, reactive sputter deposited tungsten and molybdenum oxide (WOx, MoOx) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films deposited by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WOx and MoOx towards higher work functions to improve the hole selectivity.},
doi = {10.1016/j.egypro.2017.09.259},
journal = {Energy Procedia},
number = C,
volume = 124,
place = {United States},
year = {Thu Sep 21 00:00:00 EDT 2017},
month = {Thu Sep 21 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 1 work
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