An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers

Gul, R.; Roy, U. N.; James, R. B.

doi:10.1063/1.4978377

Title: An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers

Journal Article · Wed Mar 15 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4978377· OSTI ID:1408811

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^[1]; James, R. B. ^[2]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)

In this paper, we studied point defects induced in Bridgman-grown CdZnTe detectors doped with Indium (In), Aluminium (Al), Nickel (Ni), and Tin (Sn). Point defects associated with different dopants were observed, and these defects were analyzed in detail for their contributions to electron/hole (e/h) trapping. We also explored the correlations between the nature and abundance of the point defects with their influence on the resistivity, electron mobility-lifetime (μτ_e) product, and electron trapping time. We used current-deep level transient spectroscopy to determine the energy, capture cross-section, and concentration of each trap. Furthermore, we used the data to determine the trapping and de-trapping times for the charge carriers. In In-doped CdZnTe detectors, uncompensated Cd vacancies (V_Cd^-) were identified as a dominant trap. The V_Cd^- were almost compensated in detectors doped with Al, Ni, and Sn, in addition to co-doping with In. Dominant traps related to the dopant were found at E_v + 0.36 eV and E_v + 1.1 eV, E_c + 76 meV and E_v + 0.61 eV, E_v + 36 meV and E_v + 0.86 eV, E_v + 0.52 eV and E_c + 0.83 eV in CZT:In, CZT:In + Al, CZT:In + Ni, and CZT:In + Sn, respectively. Results indicate that the addition of other dopants with In affects the type, nature, concentration (N_t), and capture cross-section (σ) and hence trapping (t_t) and de-trapping (t_dt) times. Finally, the dopant-induced traps, their corresponding concentrations, and charge capture cross-section play an important role in the performance of radiation detectors, especially for devices that rely solely on electron transport.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Savannah River National Laboratory (SRNL), Aiken, SC (United States)

Sponsoring Organization:: USDOE; BNL Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC09-08SR22470

OSTI ID:: 1408811

Alternate ID(s):: OSTI ID: 1349378

Report Number(s):: SRNL-STI-2017-00209

Journal Information:: Journal of Applied Physics, Vol. 121, Issue 11; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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References (19)

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Macroscopic effects and microscopic origins of gamma-ray irradiation on In-doped CdZnTe crystal Nan, Ruihua; Li, Tao; Jian, Zengyun Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 23 https://doi.org/10.1007/s10854-018-0180-0	journal	October 2018

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36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
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doping
point defects
electrical resistivity
charge carriers
nickel

Title: An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers

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