Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect

Zhang, Zuocheng; Feng, Xiao; Wang, Jing; Lian, Biao; Zhang, Jinsong; Chang, Cuizu; Guo, Minghua; Ou, Yunbo; Feng, Yang; Zhang, Shou-Cheng; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Yayu

doi:10.1038/nnano.2017.149

Magnetic quantum phase transition in Cr-doped Bi₂(Se_xTe_1-x)₃ driven by the Stark effect

Journal Article · Mon Aug 07 00:00:00 EDT 2017 · Nature Nanotechnology

DOI:https://doi.org/10.1038/nnano.2017.149· OSTI ID:1407490

Zhang, Zuocheng ^[1]; Feng, Xiao ^[1]; ^[2]; Lian, Biao ^[3]; Zhang, Jinsong ^[1]; Chang, Cuizu ^[1]; Guo, Minghua ^[1]; Ou, Yunbo ^[1]; Feng, Yang ^[1]; Zhang, Shou-Cheng ^[4]; He, Ke ^[5]; Ma, Xucun ^[5]; Xue, Qi-Kun ^[5]; Wang, Yayu ^[5]

Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics
Fudan Univ., Shanghai (China). State Key Lab. of Surface Physics, Dept. of Physics; Stanford Univ., CA (United States). Dept. of Physics
Stanford Univ., CA (United States). Dept. of Physics
Stanford Univ., CA (United States). Dept. of Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China)
Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China)

The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magnetic TI hinge on the accurate manipulation of magnetism and topology by external perturbations, preferably with a gate electric field. In this work, we investigate the magneto transport properties of Cr doped Bi₂(Se_xTe_1-x)₃ TI across the topological quantum critical point (QCP). We find that the external gate voltage has negligible effect on the magnetic order for samples far away from the topological QCP. However, for the sample near the QCP, we observe a ferromagnetic (FM) to paramagnetic (PM) phase transition driven by the gate electric field. Theoretical calculations show that a perpendicular electric field causes a shift of electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and consequently a magnetic phase transition. Finally, the in situ electrical control of the topological and magnetic properties of TI shed important new lights on future topological electronic or spintronic device applications.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1407490

Alternate ID(s):: OSTI ID: 1418319

Journal Information:: Nature Nanotechnology, Journal Name: Nature Nanotechnology Journal Issue: 10 Vol. 12; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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