Reconfigurable Magnetotransport in MnBi2Te4 via Gate and Magnetic Field Tuning

Jie, Yuang; Cai, Xiaofan; Lin, Yijie; Watanabe, Kenji; Taniguchi, Takashi; Yan, Jiaqiang; Ovchinnikov, Dmitry; Avsar, Ahmet

doi:10.1002/adma.202510734

Reconfigurable Magnetotransport in MnBi₂Te₄ via Gate and Magnetic Field Tuning

Journal Article · Fri Sep 26 00:00:00 EDT 2025 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202510734· OSTI ID:3001722

Jie, Yuang ^[1]; Cai, Xiaofan ^[1]; Lin, Yijie ^[1]; Watanabe, Kenji ^[2]; Taniguchi, Takashi ^[2]; ^[3]; Ovchinnikov, Dmitry ^[4]; ^[1]

National Univ. of Singapore (Singapore)
National Institute for Materials Science (NIMS), Tsukuba (Japan)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Univ. of Kansas, Lawrence, KS (United States)

The intrinsic magnetic topological insulator MnBi₂Te₄ is a promising platform for exploring quantum phases with nontrivial band topology and for enabling electrical control over coupled magnetic and electronic phase transitions. In-plane magnetic fields, in particular, offer a distinct means of tuning these properties by strengthening quantized Hall effects, enhancing surface energy gaps, and driving spin reorientation transitions. However, a systematic understanding of how such fields affect magnetotransport is limited. Here, the magnetotransport behavior of few-layer MnBi₂Te₄ as a function of gate voltage, temperature, and magnetic field angle, with a primary focus on in-plane field effects, are investigated. A gate-tunable crossover in magnetoresistance is observed from positive to negative values under in-plane magnetic fields as the gate voltage is swept below the charge neutrality point at temperatures below the Néel temperature. The in-plane field drives a transition from the antiferromagnetic ground state to a ferromagnetic configuration with spins aligned in-plane, while simultaneously altering the electronic structure, as revealed by gate-dependent transport features. The angle-dependent measurements reveal strongly gate-tunable magnetotransport anisotropy. These results establish in-plane magnetic fields as an effective tuning parameter for modulating spin and charge transport in MnBi₂Te₄, advancing prospects for reconfigurable spintronic and topological devices.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: CREST; Japan Society for the Promotion of Science (JSPS KAKENHI); Ministry of Education - Singapore; National Research Foundation Singapore; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 3001722

Journal Information:: Advanced Materials, Journal Name: Advanced Materials; ISSN 1521-4095; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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