Characterization of an active metasurface using terahertz ellipsometry

Karl, Nicholas; Heimbeck, Martin S.; Everitt, Henry O.; Chen, Hou-Tong; Taylor, Antoinette J.; Brener, Igal; Benz, Alexander; Reno, John L.; Mendis, Rajind; Mittleman, Daniel M.

doi:10.1063/1.5004194

Title: Characterization of an active metasurface using terahertz ellipsometry

Journal Article · Mon Nov 06 00:00:00 EST 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5004194· OSTI ID:1426809

Karl, Nicholas ^[1]; Heimbeck, Martin S. ^[2];

^[2];

^[3]; Taylor, Antoinette J. ^[3]; Brener, Igal ^[4]; Benz, Alexander ^[4]; Reno, John L. ^[4]; Mendis, Rajind ^[1];

^[1]

Brown Univ., Providence, RI (United States). School of Engineering
U.S. Army AMRDEC, Redstone Arsenal, Huntsville, AL (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

Switchable metasurfaces fabricated on a doped epi-layer have become an important platform for developing techniques to control terahertz (THz) radiation, as a DC bias can modulate the transmission characteristics of the metasurface. To model and understand this performance in new device configurations accurately, a quantitative understanding of the bias-dependent surface characteristics is required. In this work, we perform THz variable angle spectroscopic ellipsometry on a switchable metasurface as a function of DC bias. By comparing these data with numerical simulations, we extract a model for the response of the metasurface at any bias value. Using this model, we predict a giant bias-induced phase modulation in a guided wave configuration. Lastly, these predictions are in qualitative agreement with our measurements, offering a route to efficient modulation of THz signals.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525; AC52-06NA25396

OSTI ID:: 1426809

Alternate ID(s):: OSTI ID: 1407432

Report Number(s):: SAND-2018-2215J; 661067; TRN: US1802712

Journal Information:: Applied Physics Letters, Vol. 111, Issue 19; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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Cited By (2)

Perspective: Terahertz science and technology Mittleman, Daniel M. Journal of Applied Physics, Vol. 122, Issue 23 https://doi.org/10.1063/1.5007683	journal	December 2017
Direct-tuning methods for semiconductor metamaterials Min, Li; Wang, Wenjin; Huang, Lirong Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-54066-5	journal	November 2019

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