Transient GaAs plasmonic metasurfaces at terahertz frequencies
Abstract
Here we demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. In conclusion, the platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.
- Authors:
-
[1];
[1];
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Indian Institute of Science Education and Research, Mohanpur (India)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1338393
- Report Number(s):
- SAND-2016-12650J
Journal ID: ISSN 2330-4022; 649940
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- ACS Photonics
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2330-4022
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; metasurface; perfect absorber; semiconductor; ultrafast plasmonics
Citation Formats
Yang, Yuanmu, Kamaraju, N., Campione, Salvatore, Liu, Sheng, Reno, John L., Sinclair, Michael B., Prasankumar, Rohit P., and Brener, Igal. Transient GaAs plasmonic metasurfaces at terahertz frequencies. United States: N. p., 2016.
Web. doi:10.1021/acsphotonics.6b00735.
Yang, Yuanmu, Kamaraju, N., Campione, Salvatore, Liu, Sheng, Reno, John L., Sinclair, Michael B., Prasankumar, Rohit P., & Brener, Igal. Transient GaAs plasmonic metasurfaces at terahertz frequencies. United States. https://doi.org/10.1021/acsphotonics.6b00735
Yang, Yuanmu, Kamaraju, N., Campione, Salvatore, Liu, Sheng, Reno, John L., Sinclair, Michael B., Prasankumar, Rohit P., and Brener, Igal. Fri .
"Transient GaAs plasmonic metasurfaces at terahertz frequencies". United States. https://doi.org/10.1021/acsphotonics.6b00735. https://www.osti.gov/servlets/purl/1338393.
@article{osti_1338393,
title = {Transient GaAs plasmonic metasurfaces at terahertz frequencies},
author = {Yang, Yuanmu and Kamaraju, N. and Campione, Salvatore and Liu, Sheng and Reno, John L. and Sinclair, Michael B. and Prasankumar, Rohit P. and Brener, Igal},
abstractNote = {Here we demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron–phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. In conclusion, the platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.},
doi = {10.1021/acsphotonics.6b00735},
url = {https://www.osti.gov/biblio/1338393},
journal = {ACS Photonics},
issn = {2330-4022},
number = 1,
volume = 4,
place = {United States},
year = {2016},
month = {12}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 4 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referencing / citing this record:
Epsilon-Near-Zero Photonics: A New Platform for Integrated Devices
journal, March 2018
- Niu, Xinxiang; Hu, Xiaoyong; Chu, Saisai
- Advanced Optical Materials, Vol. 6, Issue 10
All‐Optical and Ultrafast Tuning of Terahertz Plasmonic Metasurfaces
journal, May 2018
- Cai, Honglei; Huang, Qiuping; Hu, Xiang
- Advanced Optical Materials, Vol. 6, Issue 14
Femtosecond optical polarization switching using a cadmium oxide-based perfect absorber
journal, May 2017
- Yang, Yuanmu; Kelley, Kyle; Sachet, Edward
- Nature Photonics, Vol. 11, Issue 6
High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths
journal, November 2017
- Emani, Naresh Kumar; Khaidarov, Egor; Paniagua-Domínguez, Ramón
- Applied Physics Letters, Vol. 111, Issue 22
Accelerating terahertz all-optical modulation by hot carriers effects of silver nanorods in PVA film
journal, July 2019
- Yu, Jian-Ping; Chen, Sai; Fan, Fei
- AIP Advances, Vol. 9, Issue 7
Semiconductor infrared plasmonics
journal, May 2019
- Taliercio, Thierry; Biagioni, Paolo
- Nanophotonics, Vol. 8, Issue 6
A Review of THz Modulators with Dynamic Tunable Metasurfaces
journal, July 2019
- Wang, Lan; Zhang, Yaxin; Guo, Xiaoqing
- Nanomaterials, Vol. 9, Issue 7