skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy

Journal Article · · New Journal of Physics
 [1];  [2];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Lab. for Physical Sciences, College Park, MD (United States)

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1406367
Alternate ID(s):
OSTI ID: 1465800
Report Number(s):
SAND-2017-11273J; SAND-2017-6009J; 657902; TRN: US1703263
Journal Information:
New Journal of Physics, Vol. 19, Issue 11; ISSN 1367-2630
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

References (58)

Surface Waves and Strain Modulations in Si1-xGex Alloy Layers on Si journal January 1992
Scanning Tunneling Microscopy study of Oxide Nucleation and Oxidation-Induced Roughening at Elevated Temperatures on the Si(001)-(2 × 1) Surface journal August 1994
Effect of surface steps on oxide-cluster nucleation and sticking of oxygen on Si(001) surfaces journal April 1999
Evolution of surface morphology of Si(100)-(2×1) during oxygen adsorption at elevated temperatures journal July 1994
Finite-temperature phase diagram of vicinal Si(100) surfaces journal May 1990
Silicon quantum electronics journal July 2013
Metamorphic epitaxial materials journal March 2016
Controllable valley splitting in silicon quantum devices journal December 2006
Investigating the regrowth surface of Si:P δ-layers toward vertically stacked three dimensional devices journal December 2009
Theory of valley-orbit coupling in a Si/SiGe quantum dot journal March 2010
Exchange in Silicon-Based Quantum Computer Architecture journal December 2001
Interface roughness, valley-orbit coupling, and valley manipulation in quantum dots journal November 2010
Multivalley effective mass theory simulation of donors in silicon journal June 2015
Epitaxial growth of silicon on Si(001) by scanning tunneling microscopy
  • Hamers, R. J.; Köhler, U. K.; Demuth, J. E.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 8, Issue 1 https://doi.org/10.1116/1.577063
journal January 1990
Growth and equilibrium structures in the epitaxy of Si on Si(001) journal November 1989
Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100) journal September 1990
Semiconductor molecular‐beam epitaxy at low temperatures journal April 1995
Surface roughening during low temperature Si(100) epitaxy journal August 1997
Instabilities in crystal growth by atomic or molecular beams journal February 2000
Origin of roughening in epitaxial growth of silicon on Si(0 0 1) and Ge(0 0 1) surfaces journal June 2001
Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth journal September 2001
Roughening of steps during homoepitaxial growth on Si(001) journal December 1993
Kinetic Growth Instabilities on Vicinal Si(001) Surfaces journal August 1999
On the microscopic origin of the kinetic step bunching instability on vicinal Si() journal December 2002
Crystal surfaces in and out of equilibrium: A modern view journal March 2010
{311} facets of selectively grown epitaxial Si layers onSiO2-patterned Si(100) surfaces journal December 1993
Structures of Steps and Appearances of {311} Facets on Si(100) Surfaces journal January 1995
A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour journal June 1967
Growth and perfection of chemically-deposited epitaxial layers of Si and GaAs journal January 1968
Surface Processes in the Growth of Silicon on (111) Silicon in Ultrahigh Vacuum journal September 1968
The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniques journal May 1971
Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition journal March 1986
Examination of pits appearing on selectively grown Si film on SiO2 patterned wafers journal July 1996
In situ Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperature journal April 1997
Self-Assembly of Quantum-Dot Molecules: Heterogeneous Nucleation of SiGe Islands on Si(100) journal August 1998
Analysis of growth on 75 mm Si (100) wafers by molecular beam epitaxy using in vacuo scanning tunneling microscopy journal February 2002
Pyramid-like nanostructures created by Si homoepitaxy on Si(001) journal February 2009
Influence of irregular growth of monoatomic steps during Si/Si(001) epitaxy on generation of surface defects conference May 2013
Competing relaxation mechanisms in strained layers journal May 1994
Morphology and microstructure of tensile-strained SiGe(001) thin epitaxial films journal January 1998
Antiphase boundaries as nucleation centers in low-temperature silicon epitaxial growth journal October 1993
Atomistic Processes in the Early Stages of Thin-Film Growth journal April 1997
STM studies of Si(100)-2×1 oxidation: defect chemistry and Si ejection journal July 1992
Evolution of atomic‐scale roughening on Si(001)‐(2×1) surfaces resulting from high temperature oxidation journal May 1995
Stabilities of single-layer and bilayer steps on Si(001) surfaces journal October 1987
Steps on surfaces: experiment and theory journal September 1999
Elastic cost of silicon step rebonding journal January 2016
Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces
  • Swartzentruber, B. S.; Mo, Y. ‐W.; Webb, M. B.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 4 https://doi.org/10.1116/1.576167
journal July 1989
Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE journal January 1986
Evolution of surface morphology and strain during SiGe epitaxy journal December 1992
Cuspidal pit formation during the growth of SixGe1−x strained films journal January 1995
Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(001) journal July 2000
Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films: Nucleation of “quantum fortresses” journal September 2002
Substrate pit formation and surface wetting during thermal annealing of strained-Si/relaxed-Si0.78Ge0.22 heterostructure journal February 2007
The interaction of molecular and atomic oxygen with Si(100) and Si(111) journal January 1993
Gas phase etching of Si(111)-(7×7) surfaces by oxygen observed by scanning tunneling microscopy journal November 1993
Growth of epitaxial germanium-silicon heterostructures by chemical vapour deposition journal February 1993
Growth mode inSi(100)(2×1)epitaxy by low-temperature chemical-vapor deposition journal May 1998

Similar Records

Anisotropy in nucleation and growth of two-dimensional islands during homoepitaxy on hex'' reconstructed Au(100)
Journal Article · Mon Jul 25 00:00:00 EDT 1994 · Physical Review Letters; (United States) · OSTI ID:1406367

Threshold behavior in synchrotron-radiation-stimulated recrystallization during Si homoepitaxy on Si(100)
Journal Article · Sun Jun 01 00:00:00 EDT 1997 · Applied Physics Letters · OSTI ID:1406367

Ultradoping Boron on Si(100) via Solvothermal Chemistry
Journal Article · Fri Jul 09 00:00:00 EDT 2021 · Chemistry - A European Journal · OSTI ID:1406367