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Ultradoping Boron on Si(100) via Solvothermal Chemistry

Journal Article · · Chemistry - A European Journal

Abstract Ultradoping introduces unprecedented dopant levels into Si, which transforms its electronic behavior and enables its use as a next‐generation electronic material. Commercialization of ultradoping is currently limited by gas‐phase ultra‐high vacuum requirements. Solvothermal chemistry is amenable to scale‐up. However, an integral part of ultradoping is a direct chemical bond between dopants and Si, and solvothermal dopant‐Si surface reactions are not well‐developed. This work provides the first quantified demonstration of achieving ultradoping concentrations of boron (∼1e14 cm 2 ) by using a solvothermal process. Surface characterizations indicate the catalyst cross‐reacted, which led to multiple surface products and caused ambiguity in experimental confirmation of direct surface attachment. Density functional theory computations elucidate that the reaction results in direct B−Si surface bonds. This proof‐of‐principle work lays groundwork for emerging solvothermal ultradoping processes.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1810387
Alternate ID(s):
OSTI ID: 1811725
Report Number(s):
SAND-2021-7880J; 697251
Journal Information:
Chemistry - A European Journal, Vol. 27, Issue 53; ISSN 0947-6539
Publisher:
ChemPubSoc EuropeCopyright Statement
Country of Publication:
United States
Language:
English

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