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Ultradoping Boron on Si(100) via Solvothermal Chemistry

Journal Article · · Chemistry - A European Journal
 [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); New Mexico State Univ., Albuquerque, NM (United States)
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Ultradoping introduces unprecedented dopant levels into Si, which transforms its electronic behavior and enables its use as a next-generation electronic material. Commercialization of ultradoping is currently limited by gas-phase ultra-high vacuum requirements. Solvothermal chemistry is amenable to scale-up. However, an integral part of ultradoping is a direct chemical bond between dopants and Si, and solvothermal dopant-Si surface reactions are not well-developed. This work provides the first quantified demonstration of achieving ultradoping concentrations of boron (~1e14 cm2) by using a solvothermal process. Surface characterizations indicate the catalyst cross-reacted, which led to multiple surface products and caused ambiguity in experimental confirmation of direct surface attachment. Density functional theory computations elucidate that the reaction results in direct B-Si surface bonds. Finally, this proof-of-principle work lays groundwork for emerging solvothermal ultradoping processes.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE; USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1810387
Alternate ID(s):
OSTI ID: 1811725
Report Number(s):
SAND--2021-7880J; 697251
Journal Information:
Chemistry - A European Journal, Journal Name: Chemistry - A European Journal Journal Issue: 53 Vol. 27; ISSN 0947-6539
Publisher:
ChemPubSoc EuropeCopyright Statement
Country of Publication:
United States
Language:
English

References (33)

Covalently Attached Monolayers on Hydrogen-Terminated Si(100): Extremely Mild Attachment by Visible Light journal March 2004
Covalently Attached Monolayers on Hydrogen-Terminated Si(100): Extremely Mild Attachment by Visible Light journal March 2004
Characterization of a boro-silicon oxynitride prepared by thermal nitridation of a polyborosiloxane journal January 1996
Self assembled monolayers on silicon for molecular electronics journal May 2006
Reaction of BCl3 with H- and Cl-terminated Si(1 0 0) as a pathway for selective, monolayer doping through wet chemistry journal December 2020
Synthesis and structural characterization of SiBOC ceramic fibers derived from single-source polyborosiloxane journal May 2011
Monolayer Doping of Silicon through Grafting a Tailored Molecular Phosphorus Precursor onto Oxide-Passivated Silicon Surfaces journal May 2016
Functionalization of Silica Nanoparticles and Native Silicon Oxide with Tailored Boron-Molecular Precursors for Efficient and Predictive p -Doping of Silicon journal June 2015
Mechanism of Phosphorus Transport Through Silicon Oxide During Phosphonic Acid Monolayer Doping journal April 2018
Monolayer Contact Doping from a Silicon Oxide Source Substrate journal April 2017
Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers journal December 2019
Boosting the Boron Dopant Level in Monolayer Doping by Carboranes journal December 2015
Functionalization of SiO 2 Surfaces for Si Monolayer Doping with Minimal Carbon Contamination journal January 2018
Toward Defect-Free Doping by Self-Assembled Molecular Monolayers: The Evolution of Interstitial Carbon-Related Defects in Phosphorus-Doped Silicon journal February 2019
Organometallic Chemistry on Silicon and Germanium Surfaces journal May 2002
Formation and Structure of Self-Assembled Monolayers journal January 1996
Core-electron binding energies for compounds of boron, carbon, and chromium journal March 1970
Alkyl Monolayers on Silicon Prepared from 1-Alkenes and Hydrogen-Terminated Silicon journal March 1995
Importance of Monolayer Quality for Interpreting Current Transport through Organic Molecules:  Alkyls on Oxide-Free Si journal August 2006
Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing journal January 2009
Contact Doping of Silicon Wafers and Nanostructures with Phosphine Oxide Monolayers journal October 2012
Iridium-Catalyzed Preparation of Silylboranes by Silane Borylation and Their Use in the Catalytic Borylation of Arenes journal October 2008
Controlled nanoscale doping of semiconductors via molecular monolayers journal November 2007
The sub-band structure of atomically sharp dopant profiles in silicon journal June 2020
Bipolar device fabrication using a scanning tunnelling microscope journal July 2020
Electrical characterization of an ultrahigh concentration boron delta‐doping layer journal August 1994
Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation journal April 2005
Doping reaction of PH 3 and B 2 H 6 with Si(100) journal June 1986
Characterization of metallic impurities in Si using a recombination-lifetime correlation method journal October 1997
Chemical approaches for doping nanodevice architectures journal July 2016
Synthesis and characterization of P δ -layer in SiO 2 by monolayer doping journal January 2016
Growth and structural analysis of an ordered boron monolayer in Si(100) journal November 1992
Atomically Precise Placement of Single Dopants in Si journal September 2003

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
boron-silicon bonds
monolayers
on-surface reactions
ultradoping