Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects.
Conference
·
OSTI ID:1405232
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1405232
- Report Number(s):
- SAND2016-10583C; 648458
- Country of Publication:
- United States
- Language:
- English
Similar Records
Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects.
Uncertainty in Silicon Displacement Damage Metrics due to the Displacement Threshold Treatment.
Uncertainty in Silicon Displacement Damage Metrics due to the Displacement Threshold Treatment.
Conference
·
Sun Jul 01 00:00:00 EDT 2018
·
OSTI ID:1570179
Uncertainty in Silicon Displacement Damage Metrics due to the Displacement Threshold Treatment.
Conference
·
Mon Feb 29 23:00:00 EST 2016
·
OSTI ID:1346452
Uncertainty in Silicon Displacement Damage Metrics due to the Displacement Threshold Treatment.
Conference
·
Mon Aug 01 00:00:00 EDT 2016
·
OSTI ID:1377711