Heitler-London model for acceptor-acceptor interactions in doped semiconductors

Durst, Adam C.; Castoria, Kyle E.; Bhatt, R. N.

doi:10.1103/PhysRevB.96.155208

Title: Heitler-London model for acceptor-acceptor interactions in doped semiconductors

Journal Article · Thu Oct 26 00:00:00 EDT 2017 · Physical Review. B

DOI:https://doi.org/10.1103/PhysRevB.96.155208· OSTI ID:1405050

Durst, Adam C.; Castoria, Kyle E.; Bhatt, R. N.

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Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0002140

OSTI ID:: 1405050

Journal Information:: Physical Review. B, Journal Name: Physical Review. B Vol. 96 Journal Issue: 15; ISSN 2469-9950

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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