skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Heitler-London model for acceptor-acceptor interactions in doped semiconductors

Journal Article · · Physical Review B

Not provided.

Research Organization:
Princeton Univ., NJ (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
SC0002140
OSTI ID:
1540717
Journal Information:
Physical Review B, Vol. 96, Issue 15; ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English

References (56)

Magnetic Behavior of an S = 1 2 Amorphous Antiferromagnet journal April 1978
A scaling method for low temperature behavior of random antiferromagnetic systems (invited) journal March 1981
Scaling Studies of Highly Disordered Spin-½ Antiferromagnetic Systems journal February 1982
Low-temperature properties of the random Heisenberg antiferromagnetic chain journal August 1980
Random antiferromagnetic quantum spin chains journal August 1994
Strong disorder RG approach of random systems journal June 2005
Random Quantum Spin Chains: A Real-Space Renormalization Group Study journal December 1995
Random Bonds and Topological Stability in Gapped Quantum Spin Chains journal January 1996
Generation of Large Moments in a Spin-1 Chain with Random Antiferromagnetic Couplings journal May 1998
A silicon-based nuclear spin quantum computer journal May 1998
Silicon quantum electronics journal July 2013
Single-shot readout of an electron spin in silicon journal September 2010
Electron spin coherence exceeding seconds in high-purity silicon journal December 2011
Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28 journal November 2013
Exchange coupling between silicon donors: The crucial role of the central cell and mass anisotropy journal June 2014
Hyperfine Stark effect of shallow donors in silicon journal November 2014
Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot journal August 2014
High-fidelity resonant gating of a silicon-based quantum dot hybrid qubit journal October 2015
Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings journal January 2016
Quantum gates with donors in germanium journal November 2016
Strong coupling of a single electron in silicon to a microwave photon journal December 2016
On-chip cavity quantum phonodynamics with an acceptor qubit in silicon journal August 2013
Probing the Spin States of a Single Acceptor Atom journal February 2014
Interface effects on acceptor qubits in silicon and germanium journal November 2015
Quantum simulation of the Hubbard model with dopant atoms in silicon journal April 2016
Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon journal June 2016
Spin qubit manipulation of acceptor bound states in group IV quantum wells journal April 2017
Optical study of interacting donors in semiconductors journal May 1981
Clustering in the approach to the metal-insulator transition journal December 1980
Shallow impurity interactions and the metal-insulator transition journal September 1987
Magnetic Properties of Doped Semiconductors journal January 1986
Wechselwirkung neutraler Atome und hom�opolare Bindung nach der Quantenmechanik journal June 1927
Asymptotic Exchange Coupling of Two Hydrogen Atoms journal April 1964
Theory of shallow acceptor states in Si and Ge journal March 1962
Wave functions and energies of shallow acceptor states in germanium journal July 1964
Spherical Model of Shallow Acceptor States in Semiconductors journal September 1973
Cubic contributions to the spherical model of shallow acceptor states journal February 1974
Symmetry of anisotropic exchange interactions in semiconductor nanostructures journal February 2004
Theory of valence-band holes as Luttinger spinors in vertically coupled quantum dots journal September 2008
Calculating the energy spectrum and electronic structure of two holes in a pair of strained Ge/Si coupled quantum dots journal March 2010
Spin exchange energy for a pair of valence band holes in artificial molecules journal September 2014
Scaling behavior of the magnetization of Si:B journal November 1986
Ga 1 x Mn x As : A Frustrated Ferromagnet journal July 2002
Effective Hamiltonian for G a 1 x M n x A s in the Dilute Limit journal August 2003
Positional disorder, spin-orbit coupling, and frustration in Ga 1 x Mn x As journal March 2005
Disorder, spin-orbit, and interaction effects in dilute Ga 1 x Mn x As journal July 2005
Potential‐Energy Curves for the X 1 Σ g + , b 3 Σ u + , and C 1 Π u States of the Hydrogen Molecule journal October 1965
Making Nonmagnetic Semiconductors Ferromagnetic journal August 1998
Transport properties and origin of ferromagnetism in (Ga,Mn)As journal January 1998
Polaron-polaron interactions in diluted magnetic semiconductors journal January 1996
Bound magnetic polaron interactions in insulating doped diluted magnetic semiconductors journal June 2002
Hole magnetic polarons in zinc-blende semimagnetic semiconductors journal May 1997
Model for the Mn acceptor in GaAs journal November 1999
Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors journal August 2001
Low-temperature magnetic susceptibility of Si: P in the nonmetallic region journal July 1981
The Hubbard model for the hydrogen molecule journal November 2001

Similar Records

Heitler-London model for acceptor-acceptor interactions in doped semiconductors
Journal Article · Thu Oct 26 00:00:00 EDT 2017 · Physical Review. B · OSTI ID:1540717

Quadrupolar interactions between acceptor pairs in $\mathcal{p}$-doped semiconductors
Journal Article · Wed Jan 22 00:00:00 EST 2020 · Physical Review. B · OSTI ID:1540717

ROTATIONAL PROPERTIES ASSOCIATED WITH THE HEITLER--LONDON MODEL OF H .
Journal Article · Wed Jan 01 00:00:00 EST 1969 · J. Chem. Phys., 50: 2372-5(Mar. 15, 1969). · OSTI ID:1540717

Related Subjects