Effects of Process Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs.
Conference
·
OSTI ID:1404769
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1404769
- Report Number(s):
- SAND2016-10097C; 648125
- Country of Publication:
- United States
- Language:
- English
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