Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs

Journal Article · Wed May 17 00:00:00 EDT 2017 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2017.2705118· OSTI ID:1467000

Mclain, Michael L.  ^[1]; Barnaby, Hugh  ^[2]; Schlenvogt, Garrett ^[3]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
2. Arizona State Univ., Tempe, AZ (United States)
3. Silvaco, Inc., Chelmsford, MA (United States)

The effects of radiation-induced defects and statistical variation in the dose and energy of MOSFET channel implants in a modern bulk CMOS technology are modeled using a process simulator in combination with analytical computations. The model integrates doping profiles obtained from process simulations and experimentally determined defect potentials into implicit surface potential equations. Solutions to these equations are then used to model radiation-induced edge leakage currents in 90-nm bulk CMOS n-channel MOSFETs. The results indicate that slight variations in the channel implant parameters can have a significant impact on the doping profile along the shallow trench isolation sidewall and thus the radiation-induced edge leakage currents.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000
• OSTI ID: 1467000
• Report Number(s): SAND2018-0525J; 660030
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 64, Issue 8; ISSN 0018-9499
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
97 MATHEMATICS AND COMPUTING
bulk CMOS
process variation
radiation-induced defects
radiation-induced edge leakage currents
total ionizing dose (TID)
implants
semiconductor process modeling
computational modeling
mathematical model
doping profiles