Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9

Shrestha, K.; Graf, D.; Marinova, V.; Lorenz, B.; Chu, C. W.

doi:10.1063/1.4997947

Weak antilocalization effect due to topological surface states in Bi₂Se_2.1Te_0.9

Journal Article · Wed Oct 11 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4997947· OSTI ID:1402682

Shrestha, K. ^[1]; Graf, D. ^[2]; Marinova, V. ^[3]; Lorenz, B. ^[4]; Chu, C. W. ^[5]

Idaho National Lab. (INL), Idaho Falls, ID (United States)
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Bulgarian Academy of Sciences, Sofia (Bulgaria). Inst. of Optical Materials and Technology
Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics
Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

In this work, we have investigated the weak antilocalization (WAL) effect in the p-type Bi₂Se_2.1Te_0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi₂Se_2.1Te_0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

View Accepted Manuscript (DOE)

Research Organization:: Idaho National Laboratory, Idaho Falls, ID (United States)

Sponsoring Organization:: Bulgaria National Science Fund (BNSF); John J. and Rebecca B. Moores Endowment Fund; National Science Foundation (NSF); T.L.L. Temple Foundation; US Air Force Office of Scientific Research (AFOSR); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC07-05ID14517

OSTI ID:: 1402682

Alternate ID(s):: OSTI ID: 1399058

Report Number(s):: INL/JOU--17-42598

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 14 Vol. 122; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (2)

Oscillating planar Hall response in bulk crystal of topological insulator Sn doped Bi _1.1 Sb _0.9 Te ₂ S Wu, Bin; Pan, Xing-Chen; Wu, Wenkai Applied Physics Letters, Vol. 113, Issue 1 https://doi.org/10.1063/1.5031906	journal	July 2018
Evidence of a 2D Fermi surface due to surface states in a p -type metallic Bi ₂ Te ₃ Shrestha, K.; Marinova, V.; Lorenz, B. Journal of Physics: Condensed Matter, Vol. 30, Issue 18 https://doi.org/10.1088/1361-648x/aab6ca	journal	April 2018

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Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
Fermi surface
Magnetoresistance
Topologi
Weak Antilocalization
classical electromagnetism
crystallography
electronic transport
hall mobility
magnetic ordering
transition metals