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Title: Weak antilocalization effect due to topological surface states in Bi 2Se 2.1Te 0.9

Abstract

In this work, we have investigated the weak antilocalization (WAL) effect in the p-type Bi 2Se 2.1Te 0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi 2Se 2.1Te 0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

Authors:
 [1];  [2];  [3];  [4];  [5]
  1. Idaho National Lab. (INL), Idaho Falls, ID (United States)
  2. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
  3. Bulgarian Academy of Sciences, Sofia (Bulgaria). Inst. of Optical Materials and Technology
  4. Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics
  5. Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); T.L.L. Temple Foundation; John J. and Rebecca B. Moores Endowment Fund; Bulgaria National Science Fund (BNSF); National Science Foundation (NSF)
OSTI Identifier:
1402682
Alternate Identifier(s):
OSTI ID: 1399058
Report Number(s):
INL/JOU-17-42598
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC07-05ID14517; FA9550-15-1-0236; DN 08/9; DMR-1157490
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 14; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; Weak Antilocalization; Magnetoresistance; Topologi; crystallography; electronic transport; magnetic ordering; transition metals; hall mobility; classical electromagnetism; Fermi surface

Citation Formats

Shrestha, K., Graf, D., Marinova, V., Lorenz, B., and Chu, C. W. Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9. United States: N. p., 2017. Web. doi:10.1063/1.4997947.
Shrestha, K., Graf, D., Marinova, V., Lorenz, B., & Chu, C. W. Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9. United States. https://doi.org/10.1063/1.4997947
Shrestha, K., Graf, D., Marinova, V., Lorenz, B., and Chu, C. W. Wed . "Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9". United States. https://doi.org/10.1063/1.4997947. https://www.osti.gov/servlets/purl/1402682.
@article{osti_1402682,
title = {Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9},
author = {Shrestha, K. and Graf, D. and Marinova, V. and Lorenz, B. and Chu, C. W.},
abstractNote = {In this work, we have investigated the weak antilocalization (WAL) effect in the p-type Bi2Se2.1Te0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi2Se2.1Te0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.},
doi = {10.1063/1.4997947},
url = {https://www.osti.gov/biblio/1402682}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 14,
volume = 122,
place = {United States},
year = {2017},
month = {10}
}

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Works referenced in this record:

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    Works referencing / citing this record:

    Oscillating planar Hall response in bulk crystal of topological insulator Sn doped Bi 1.1 Sb 0.9 Te 2 S
    journal, July 2018


    Evidence of a 2D Fermi surface due to surface states in a p -type metallic Bi 2 Te 3
    journal, April 2018