Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator

Shrestha, K.; Chou, M.; Graf, D.; Yang, H. D.; Lorenz, B.; Chu, C. W.

doi:10.1103/PhysRevB.95.195113

Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic ${Bi}_{2} {Te}_{3}$ topological insulator

Journal Article · Mon May 08 00:00:00 EDT 2017 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.95.195113· OSTI ID:1402678

Shrestha, K. ^[1]; Chou, M. ^[2]; Graf, D. ^[3]; Yang, H. D. ^[4]; Lorenz, B. ^[5]; Chu, C. W. ^[6]

Idaho National Lab. (INL), Idaho Falls, ID (United States)
National Sun Yat-Sen Univ., Kaohsiung (Taiwan). Dept. of Materials and Optoelectronic Science
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
National Sun Yat-Sen Univ., Kaohsiung (Taiwan). Dept. of Physics
Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics
Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Here, weak antilocalization (WAL) effects in Bi₂Te₃ single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large, non-saturating magnetoresistance, and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magneto-electric sensors and memory devices.

View Accepted Manuscript (DOE)

Research Organization:: Idaho National Laboratory, Idaho Falls, ID (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: J. J. and R. Moores Endowment; National Science Foundation (NSF); T. L. L. Temple Foundation; US Air Force Office of Scientific Research (AFOSR); USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC07-05ID14517; FG02-01ER45872

OSTI ID:: 1402678

Alternate ID(s):: OSTI ID: 1355958

Report Number(s):: INL/JOU--17-41643

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 19 Vol. 95; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Oscillating planar Hall response in bulk crystal of topological insulator Sn doped Bi _1.1 Sb _0.9 Te ₂ S Wu, Bin; Pan, Xing-Chen; Wu, Wenkai Applied Physics Letters, Vol. 113, Issue 1 https://doi.org/10.1063/1.5031906	journal	July 2018
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