Graphene‐Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric‐Field Effect

Kang, Kyungnam; Godin, Kyle; Kim, Young Duck; Fu, Shichen; Cha, Wujoon; Hone, James; Yang, Eui‐Hyeok

doi:10.1002/adma.201603898

Title: Graphene‐Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric‐Field Effect

Journal Article · Fri Feb 24 00:00:00 EST 2017 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201603898· OSTI ID:1401758

Kang, Kyungnam ^[1]; Godin, Kyle ^[1]; Kim, Young Duck ^[2]; Fu, Shichen ^[1]; Cha, Wujoon ^[2]; Hone, James ^[2]; Yang, Eui‐Hyeok ^[1]

Department of Mechanical Engineering Stevens Institute of Technology Hoboken NJ 07030 USA
Department of Mechanical Engineering Columbia University New York NY 10027 USA

Transition metal dichalcogenides (TMDs) have emerged as promising materials to complement graphene for advanced optoelectronics. However, irreversible degradation of chemical vapor deposition‐grown monolayer TMDs via oxidation under ambient conditions limits applications of TMD‐based devices. Here, the growth of oxidation‐resistant tungsten disulfide (WS ₂ ) monolayers on graphene is demonstrated, and the mechanism of oxidation of WS ₂ on SiO ₂ , graphene/SiO ₂ , and on graphene suspended in air is elucidated. While WS ₂ on a SiO ₂ substrate begins oxidation within weeks, epitaxially grown WS ₂ on suspended graphene does not show any sign of oxidation, attributed to the screening effect of surface electric field caused by the substrate. The control of a local oxidation of WS ₂ on a SiO ₂ substrate by a local electric field created using an atomic force microscope tip is also demonstrated.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐SC0012704

OSTI ID:: 1401758

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Vol. 29 Journal Issue: 18; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Cited by: 42 works

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