Enhanced Ferroelectric and Visible‐Light Photoelectric Properties in Multiferroic KBiFe 2 O 5 via Pressure‐Induced Phase Transition
Journal Article
·
· Advanced Electronic Materials
- Center for High Pressure Science and Technology Advanced Research (HPSTAR) Shanghai 201203 P. R. China
- Center for High Pressure Science and Technology Advanced Research (HPSTAR) Shanghai 201203 P. R. China, Department of Physics Fudan University Shanghai 200433 P. R. China
- Center for High Pressure Science and Technology Advanced Research (HPSTAR) Shanghai 201203 P. R. China, State Key Laboratory of Superhard Materials Jilin University Changchun 130012 P. R. China
- Center for High Pressure Science and Technology Advanced Research (HPSTAR) Shanghai 201203 P. R. China, High Pressure Synergetic Consortium (HPSynC) Geophysical Laboratory Carnegie Institution of Washington Argonne IL 60439 USA
- State Key Laboratory of Inorganic Synthesis and Preparative Chemistry College of Chemistry Jilin University Changchun 130012 P. R. China
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- DE‐FG02‐99ER45775; DE‐AC02‐06CH11357
- OSTI ID:
- 1401269
- Journal Information:
- Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Vol. 3 Journal Issue: 3; ISSN 2199-160X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 32 works
Citation information provided by
Web of Science
Web of Science
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