Enhanced Ferroelectric and Visible-Light Photoelectric Properties in Multiferroic KBiFe ₂ O ₅ via Pressure-Induced Phase Transition

Journal Article · Fri Feb 10 04:00:00 EST 2017 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201600498· OSTI ID:1349108

Zhang, Ganghua ^[1]; Liu, Fengliang ^[2]; Gu, Tingting ^[1]; Zhao, Yongsheng ^[3]; Li, Nana ^[1]; Yang, Wenge ^[4]; Feng, Shouhua ^[5]

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1. Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 P. R. China
2. Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 P. R. China; Department of Physics, Fudan University, Shanghai 200433 P. R. China
3. Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 P. R. China; State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 P. R. China
4. Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 P. R. China; High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne IL 60439 USA
5. State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 P. R. China

Abstract not provided

• Research Organization: Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)
• Sponsoring Organization: DOE - BASIC ENERGY SCIENCESDOE-NNSAFOREIGN
• OSTI ID: 1349108
• Journal Information: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 3 Vol. 3; ISSN 2199-160X
• Publisher: Wiley
• Country of Publication: United States
• Language: ENGLISH