Hexagonal boron nitride as a cationic diffusion barrier to form a graded band gap perovskite heterostructure

Journal Article · Fri Sep 23 00:00:00 EDT 2016 · Physica Status Solidi B. Basic Solid State Physics

DOI:https://doi.org/10.1002/pssb.201600234· OSTI ID:1401232

Ergen, Onur ^[1]; Gilbert, Stephen Matthew ^[1]; Turner, Sally J. ^[2]; Zettl, Alex ^[1]

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1. Department of Physics University of California at Berkeley Berkeley California 94720 USA, Division of Materials Sciences Lawrence Berkeley National Laboratory Berkeley California 94720 USA, Kavli Energy Nanosciences Institute at the University of California Berkeley California 94720 USA, Lawrence Berkeley National Laboratory Berkeley California 94720 USA
2. Department of Physics University of California at Berkeley Berkeley California 94720 USA, Kavli Energy Nanosciences Institute at the University of California Berkeley California 94720 USA, Lawrence Berkeley National Laboratory Berkeley California 94720 USA, Department of Chemistry University of California at Berkeley Berkeley California 94720 USA

We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h‐BN) as a cationic separator. With this technique, we successfully deposit CH ₃ NH ₃ PbI _{3− x} Br _x on CH ₃ NH ₃ SnI ₃ without cation mixing.

• Sponsoring Organization: USDOE
• Grant/Contract Number: DE‐AC02‐05CH11231
• OSTI ID: 1401232
• Journal Information: Physica Status Solidi B. Basic Solid State Physics, Journal Name: Physica Status Solidi B. Basic Solid State Physics Vol. 253 Journal Issue: 12; ISSN 0370-1972
• Publisher: Wiley Blackwell (John Wiley & Sons)
• Country of Publication: Germany
• Language: English