Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures

Tomczyk, Michelle; Zhou, Rongpu; Lee, Hyungwoo; Lee, Jung-Woo; Cheng, Guanglei; Huang, Mengchen; Irvin, Patrick; Eom, Chang-Beom; Levy, Jeremy

doi:10.1063/1.4999804

Title: Electrostatically tuned dimensional crossover in LaAlO₃/SrTiO₃ heterostructures

Journal Article · Mon Oct 16 00:00:00 EDT 2017 · APL Materials

DOI:https://doi.org/10.1063/1.4999804· OSTI ID:1501550

Tomczyk, Michelle ^[1]; Zhou, Rongpu ^[2]; Lee, Hyungwoo ^[3]; Lee, Jung-Woo ^[3]; Cheng, Guanglei ^[1]; Huang, Mengchen ^[1]; Irvin, Patrick ^[1]; Eom, Chang-Beom ^[3];

^[1]

Univ. of Pittsburgh, PA (United States). Dept. of Physics and Astronomy; Pittsburgh Quantum Inst., PA (United States)
Univ. of Pittsburgh, PA (United States). Dept. of Physics and Astronomy
Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering

We report a gate-tunable dimensional crossover in sub-micrometer-scale channels created at the LaAlO₃/SrTiO₃ interface. Conducting channels of widths 10 nm and 200 nm are created using conducting atomic force microscope lithography. Under sufficient negative back-gate tuning, the orbital magnetoconductance of the 200 nm channel is strongly quenched, and residual signatures of low-field weak-antilocalization become strikingly similar to that of the 10 nm channel. The dimensional crossover for the 200 nm channel takes place near the conductance quantum G = 2e²/h. The ability to tune the dimensionality of narrow LaAlO₃/SrTiO₃ channels has implications for interpreting transport in a variety of gate-tunable oxide-heterostructure devices.

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Research Organization:: Univ. of Wisconsin, Madison, WI (United States); Univ. of Pittsburgh, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Office of Naval Research (ONR) (United States)

Grant/Contract Number:: FG02-06ER46327; N00014-15-1-2847; FG02-06ER26327

OSTI ID:: 1501550

Alternate ID(s):: OSTI ID: 1399634

Journal Information:: APL Materials, Vol. 5, Issue 10; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 5 works

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Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices Kumah, Divine P.; Ngai, Joseph H.; Kornblum, Lior Advanced Functional Materials https://doi.org/10.1002/adfm.201901597	journal	July 2019
Conductive Oxide Interfaces for Field Effect Devices Kornblum, Lior Advanced Materials Interfaces, Vol. 6, Issue 15 https://doi.org/10.1002/admi.201900480	journal	June 2019

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Title: Electrostatically tuned dimensional crossover in LaAlO3/SrTiO3 heterostructures

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