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Title: Optical Contrast of Passivated Graphene Films.


Abstract not provided.

; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Report Number(s):
DOE Contract Number:
Resource Type:
Resource Relation:
Conference: Proposed for presentation at the Rio Grande Symposium for Advanced Materials held October 3, 2016 in Albuquerque, NM.
Country of Publication:
United States

Citation Formats

Ruiz, Isaac, Howell, Stephen W., Draper, Bruce L., and Goldflam, Michael. Optical Contrast of Passivated Graphene Films.. United States: N. p., 2016. Web.
Ruiz, Isaac, Howell, Stephen W., Draper, Bruce L., & Goldflam, Michael. Optical Contrast of Passivated Graphene Films.. United States.
Ruiz, Isaac, Howell, Stephen W., Draper, Bruce L., and Goldflam, Michael. 2016. "Optical Contrast of Passivated Graphene Films.". United States. doi:.
title = {Optical Contrast of Passivated Graphene Films.},
author = {Ruiz, Isaac and Howell, Stephen W. and Draper, Bruce L. and Goldflam, Michael},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month =

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  • Abstract not provided.
  • A new scanning electron microscopy imaging technique has been developed to examine the logic state of conductors on passivated CMOS integrated circuits. This technique employs a modified Resistive Contrast Imaging system to acquire image data on powered devices. The image is generated by monitoring subtle shifts in the power supply current of an integrated circuit as an electron beam is scanned over the device surface. The images produced with this new technique resemble voltage contrast data from devices with the passivation removed and the surface topography subtracted. Non-destructive applications of this imaging method to functional and failed integrated circuits aremore » described. Possible irradiation effects and methods to minimize them are also discussed. 2 refs., 1 fig.« less
  • The electrical activity of as-grown and intentionally decorated misfit dislocations in an epitaxial Si/Si(Ge) heterostructure was examined using the electron beam induced current (EBIC) technique in a scanning electron microscope. Misfit dislocations, which were not visible initially, were subsequently activated either by an unknown processing contaminant or a backside metallic impurity. Passivation of these contaminated dislocations was then studied using low energy deuterium ion implantation in a Kaufman ion source. EBIC results show that the recombination activity of the decorated misfit dislocations was dramatically reduced by the deuterium treatment. Although a front side passivation treatment was more effective than amore » backside treatment, a surface ion bombardment damage problem is still evident. 5 refs., 3 figs.« less
  • Si nanoclusters with average size of a few nanometers have been synthesized by thermal vaporization of Si in an Ar buffer gas, and passivated with oxygen or atomic hydrogen. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) revealed that these nanoclusters were crystalline. All samples showed strong infrared and/or visible photoluminescence (PL) with varying decay times form nanoseconds to microseconds depending on synthesis conditions. Absorption mainly in the Si cores was observed by photoluminescence excitation (PLE) spectroscopy. The visible components of PL spectra were noted to blue shift and broaden as the size of the Si nanocrystals (nc-Si)more » was reduced, and there were differences in PL spectra for hydrogen and oxygen passivated nc-Si. This data can be explained best by a model involving absorption between quantum confined states in the Si cores and emission by surface/interface states.« less