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Title: Optical Contrast of Passivated Graphene Films.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1399337
Report Number(s):
SAND2016-10060C
648097
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Rio Grande Symposium for Advanced Materials held October 3, 2016 in Albuquerque, NM.
Country of Publication:
United States
Language:
English

Citation Formats

Ruiz, Isaac, Howell, Stephen W., Draper, Bruce L., and Goldflam, Michael. Optical Contrast of Passivated Graphene Films.. United States: N. p., 2016. Web.
Ruiz, Isaac, Howell, Stephen W., Draper, Bruce L., & Goldflam, Michael. Optical Contrast of Passivated Graphene Films.. United States.
Ruiz, Isaac, Howell, Stephen W., Draper, Bruce L., and Goldflam, Michael. 2016. "Optical Contrast of Passivated Graphene Films.". United States. doi:. https://www.osti.gov/servlets/purl/1399337.
@article{osti_1399337,
title = {Optical Contrast of Passivated Graphene Films.},
author = {Ruiz, Isaac and Howell, Stephen W. and Draper, Bruce L. and Goldflam, Michael},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month =
}

Conference:
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  • Abstract not provided.
  • A new scanning electron microscopy imaging technique has been developed to examine the logic state of conductors on passivated CMOS integrated circuits. This technique employs a modified Resistive Contrast Imaging system to acquire image data on powered devices. The image is generated by monitoring subtle shifts in the power supply current of an integrated circuit as an electron beam is scanned over the device surface. The images produced with this new technique resemble voltage contrast data from devices with the passivation removed and the surface topography subtracted. Non-destructive applications of this imaging method to functional and failed integrated circuits aremore » described. Possible irradiation effects and methods to minimize them are also discussed. 2 refs., 1 fig.« less
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