Growth and Electrical Properties of AlGaN-Based PN Diodes and High-Electron-Mobility Transistors (invited).

Conference · Thu Sep 01 00:00:00 EDT 2016

OSTI ID:1398370

Allerman, Andrew A.; Crawford, Mary H.; Armstrong, Andrew; Baca, Albert G.; Dickerson, Jeramy Ray; King, Michael Patrick; Kaplar, Robert; Lee, Stephen R.

Abstract not provided.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1398370
• Report Number(s): SAND2016-9835C; 647929
• Country of Publication: United States
• Language: English