Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions

Parameshwaran, Vijay; Clemens, Bruce

doi:10.1149/2.0411610jes

Title: Morphological Control of GaN and Its Effect within Electrochemical Heterojunctions

Journal Article · Wed Aug 17 00:00:00 EDT 2016 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/2.0411610jes· OSTI ID:1397196

Parameshwaran, Vijay ^[1]; Clemens, Bruce ^[1]

Stanford Univ., Stanford, CA (United States)

With morphological control through a solid source chemical vapor deposition process, GaN polycrystalline films, single-crystal nanowires, and mixed film/wires are grown on silicon to form a heterojunction that is a basis for III-V nitride device development. By contacting the GaN/Si structure to the CoCp₂^{0/ +} redox pair and performing impedance spectroscopy measurements, the band diagram of this junction is built for these three configurations. This serves as a basis for understanding the electrical nature of III-V nitride/Si interfaces that exist in several photonic device technologies, especially in context of using GaN nanomaterials grown on silicon for various applications. When these junctions are exposed to low-power UV illumination in contact with the Fc/Fc⁺ redox pair, photocurrents of 18, 110, and 482 nA/cm² are generated for the nanowires, mixed film/wires, and films respectively. These currents, along with the electrostatics investigated through the impedance spectroscopy, show the trends of photoconversion with GaN morphology in this junction. Furthermore, they suggest that the mixed film/wires are a promising design for solar-based applications such as photovoltaics and water splitting electrodes.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center on Nanostructuring for Efficient Energy Conversion (CNEEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001060

OSTI ID:: 1397196

Journal Information:: Journal of the Electrochemical Society, Vol. 163, Issue 10; Related Information: CNEEC partners with Stanford University (lead); Carnegie Institution at Stanford; Technical University of Denmark; ISSN 0013-4651

Publisher:: The Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 1 work

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References (30)

THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN Maruska, H. P.; Tietjen, J. J. Applied Physics Letters, Vol. 15, Issue 10 https://doi.org/10.1063/1.1652845	journal	November 1969
Electrochemical Investigation of the Gallium Nitride-Aqueous Electrolyte Interface Kocha, Shyam S. Journal of The Electrochemical Society, Vol. 142, Issue 12 https://doi.org/10.1149/1.2048511	journal	January 1995
Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system Wu, J.; Walukiewicz, W.; Yu, K. M. Journal of Applied Physics, Vol. 94, Issue 10 https://doi.org/10.1063/1.1618353	journal	November 2003
Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy Tran, Chuong A.; Osinski, A.; Karlicek, R. F. Applied Physics Letters, Vol. 75, Issue 11 https://doi.org/10.1063/1.124733	journal	September 1999
Demonstration of a visible laser on silicon using Eu-doped GaN thin films Park, J. H.; Steckl, A. J. Journal of Applied Physics, Vol. 98, Issue 5 https://doi.org/10.1063/1.2037867	journal	September 2005
Demonstration of a III–Nitride/Silicon Tandem Solar Cell Reichertz, Lothar A.; Gherasoiu, Iulian; Yu, Kin Man Applied Physics Express, Vol. 2, Issue 12 https://doi.org/10.1143/APEX.2.122202	journal	December 2009
InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off Wong, W. S.; Sands, T.; Cheung, N. W. Applied Physics Letters, Vol. 77, Issue 18 https://doi.org/10.1063/1.1319505	journal	October 2000
Improved Photovoltaic Effects of a Vertical-Type InGaN/GaN Multiple Quantum Well Solar Cell Bae, Si-Young; Shim, Jae-Phil; Lee, Dong-Seon Japanese Journal of Applied Physics, Vol. 50, Issue 9R https://doi.org/10.7567/JJAP.50.092301	journal	September 2011
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature Li, K. H.; Liu, X.; Wang, Q. Nature Nanotechnology, Vol. 10, Issue 2 https://doi.org/10.1038/nnano.2014.308	journal	January 2015
InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon Guo, Wei; Banerjee, Animesh; Bhattacharya, Pallab Applied Physics Letters, Vol. 98, Issue 19 https://doi.org/10.1063/1.3588201	journal	May 2011
Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections Kuykendall, Tevye; Pauzauskie, Peter; Lee, Sangkwon Nano Letters, Vol. 3, Issue 8 https://doi.org/10.1021/nl034422t	journal	August 2003
High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111) Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander Nano Letters, Vol. 15, Issue 4 https://doi.org/10.1021/nl504447j	journal	March 2015
Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination Han, Song; Jin, Wu; Zhang, Daihua Chemical Physics Letters, Vol. 389, Issue 1-3 https://doi.org/10.1016/j.cplett.2004.03.083	journal	May 2004
Si/InGaN Core/Shell Hierarchical Nanowire Arrays and their Photoelectrochemical Properties Hwang, Yun Jeong; Wu, Cheng Hao; Hahn, Chris Nano Letters, Vol. 12, Issue 3 https://doi.org/10.1021/nl3001138	journal	February 2012
Photoelectrochemical Properties of (In,Ga)N Nanowires for Water Splitting Investigated by in Situ Electrochemical Mass Spectroscopy Kamimura, Jumpei; Bogdanoff, Peter; Lähnemann, Jonas Journal of the American Chemical Society, Vol. 135, Issue 28 https://doi.org/10.1021/ja404043k	journal	May 2013
A Metal-Nitride Nanowire Dual-Photoelectrode Device for Unassisted Solar-to-Hydrogen Conversion under Parallel Illumination AlOtaibi, B.; Fan, S.; Vanka, S. Nano Letters, Vol. 15, Issue 10 https://doi.org/10.1021/acs.nanolett.5b02671	journal	September 2015
A Monolithically Integrated Gallium Nitride Nanowire/Silicon Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane Wang, Yichen; Fan, Shizhao; AlOtaibi, Bandar Chemistry - A European Journal, Vol. 22, Issue 26 https://doi.org/10.1002/chem.201601642	journal	May 2016
Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells Ramanathan, Kannan; Contreras, Miguel A.; Perkins, Craig L. Progress in Photovoltaics: Research and Applications, Vol. 11, Issue 4 https://doi.org/10.1002/pip.494	journal	January 2003
Thin‐film CdS/CdTe solar cell with 15.8% efficiency Britt, J.; Ferekides, C. Applied Physics Letters, Vol. 62, Issue 22 https://doi.org/10.1063/1.109629	journal	May 1993
Hydrogen-evolution characteristics of Ni–Mo-coated, radial junction, n+p-silicon microwire array photocathodes Warren, Emily L.; McKone, James R.; Atwater, Harry A. Energy & Environmental Science, Vol. 5, Issue 11 https://doi.org/10.1039/c2ee23192a	journal	January 2012
pH-Independent, 520 mV Open-Circuit Voltages of Si/Methyl Viologen ^2+/+ Contacts Through Use of Radial n ⁺ p-Si Junction Microwire Array Photoelectrodes Warren, Emily L.; Boettcher, Shannon W.; Walter, Michael G. The Journal of Physical Chemistry C, Vol. 115, Issue 2 https://doi.org/10.1021/jp109147p	journal	December 2010
Designing Active and Stable Silicon Photocathodes for Solar Hydrogen Production Using Molybdenum Sulfide Nanomaterials Benck, Jesse D.; Lee, Sang Chul; Fong, Kara D. Advanced Energy Materials, Vol. 4, Issue 18 https://doi.org/10.1002/aenm.201400739	journal	August 2014
Formation of a p–n heterojunction on GaP photocathodes for H ₂ production providing an open-circuit voltage of 710 mV Malizia, Mauro; Seger, Brian; Chorkendorff, Ib J. Mater. Chem. A, Vol. 2, Issue 19 https://doi.org/10.1039/C4TA00752B	journal	January 2014
Direction-Dependent Homoepitaxial Growth of GaN Nanowires Li, H.; Chin, A. H.; Sunkara, M. K. Advanced Materials, Vol. 18, Issue 2 https://doi.org/10.1002/adma.200501716	journal	January 2006
Thermal stability of GaN on (111) Si substrate Ishikawa, Hiroyasu; Yamamoto, Kensaku; Egawa, Takashi Journal of Crystal Growth, Vol. 189-190 https://doi.org/10.1016/S0022-0248(98)00223-1	journal	June 1998
Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications Kelzenberg, Michael D.; Boettcher, Shannon W.; Petykiewicz, Jan A. Nature Materials, Vol. 9, Issue 3, p. 239-244 https://doi.org/10.1038/nmat2635	journal	February 2010
Energy-Conversion Properties of Vapor-Liquid-Solid-Grown Silicon Wire-Array Photocathodes Boettcher, S. W.; Spurgeon, J. M.; Putnam, M. C. Science, Vol. 327, Issue 5962, p. 185-187 https://doi.org/10.1126/science.1180783	journal	January 2010
Semiconductor Nanowires for Artificial Photosynthesis Liu, Chong; Dasgupta, Neil P.; Yang, Peidong Chemistry of Materials, Vol. 26, Issue 1 https://doi.org/10.1021/cm4023198	journal	September 2013
GaN:ZnO Solid Solution as a Photocatalyst for Visible-Light-Driven Overall Water Splitting Maeda, Kazuhiko; Takata, Tsuyoshi; Hara, Michikazu Journal of the American Chemical Society, Vol. 127, Issue 23 https://doi.org/10.1021/ja0518777	journal	June 2005
Synthesis and Photocatalytic Properties of Single Crystalline (Ga _1-x Zn _x )(N _1-x O _x ) Nanotubes Hahn, Christopher; Fardy, Melissa A.; Nguyen, Catherine Israel Journal of Chemistry, Vol. 52, Issue 11-12 https://doi.org/10.1002/ijch.201200067	journal	December 2012