Growth, nitrogen vacancy reduction and solid solution formation in cubic GaN thin films and the subsequent fabrication of superlattice structures using AlN and inn. Final report, 1 June 1986-31 December 1992

Technical Report · Tue Dec 01 04:00:00 EST 1992

OSTI ID:6727852

Davis, R F

An atomic layer epitaxy deposition system configured for the growth of thin films of the III-V nitrides of A1, Ga and In has been designed, constructed and commissioned. The system allows the introduction of up to 16 gases without mixing. Self-terminating growth of crystalline GaN films has been achieved on single crystal wafers of (0001) alpha(6H)-SiC. Results of analyses via Auger spectroscopy, electron microscopy and electron diffraction are described. Deposition of AIN and GaN via gas-source MBE was also continued during this period. The principal emphasis concerned the initial stages of growth of both compounds on the substrates of (00001) alpha(6H)-SiC and (0001) sapphire, as determined using X-ray photoelectron spectroscopy. An initial layer of silicon nitride formed on the surface of SiC prior to the deposition of either nitride. The deposition of GaN on sapphire followed the Stranski-Krastanov mode of nucleation and growth, while on SiC, characteristics of three-dimensional growth were evident. By contrast, AlN grew initially in a layer-by-layer mode. Deposition of GaN on vicinal (100) Beta-SiC during UV irradiation resulted in the formation of a new 4H polytype of this material. Deposition of BN via gas-source MBE on Cu(110) resulted in nanocrystalline cBN; films grown on (111) Cu resulted in h-BN (graphitic phase). Similar studies using Si(100) substrates also resulted in the occurrence of cBN. The occurrence of the cubic polytype was enhanced while that of h-BN was discouraged with the use of the UV light at 400-500 deg C.

• Research Organization: North Carolina State Univ., Raleigh, NC (United States)
• OSTI ID: 6727852
• Report Number(s): AD-A-258804/4/XAB; CNN: N00014-86-K-0686
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
BORON COMPOUNDS
BORON NITRIDES
CARBIDES
CARBON COMPOUNDS
COHERENT SCATTERING
CORUNDUM
CRYSTALS
DEPOSITION
DIFFRACTION
DISPERSIONS
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
EPITAXY
FILMS
FLUIDS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
GASES
INDIUM COMPOUNDS
INDIUM NITRIDES
LUMINESCENCE
MICROSCOPY
MINERALS
MIXTURES
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
NITRIDES
NITROGEN COMPOUNDS
NUCLEATION
OXIDE MINERALS
PHOTOELECTRON SPECTROSCOPY
PHOTOLUMINESCENCE
PNICTIDES
SAPPHIRE
SCATTERING
SILICON CARBIDES
SILICON COMPOUNDS
SILICON NITRIDES
SOLID SOLUTIONS
SOLUTIONS
SPECTRA
SPECTROSCOPY
SUPERLATTICES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
ULTRAVIOLET SPECTRA