High efficiency low threshold current 1.3  μ m InAs quantum dot lasers on on-axis (001) GaP/Si

Jung, Daehwan; Norman, Justin; Kennedy, M. J.; Shang, Chen; Shin, Bongki; Wan, Yating; Gossard, Arthur C.; Bowers, John E.

doi:10.1063/1.4993226

Title: High efficiency low threshold current 1.3 μ m InAs quantum dot lasers on on-axis (001) GaP/Si

Journal Article · Thu Sep 21 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4993226· OSTI ID:1393694

Jung, Daehwan; Norman, Justin; Kennedy, M. J.; Shang, Chen; Shin, Bongki; Wan, Yating; Gossard, Arthur C.; Bowers, John E.

We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm−2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000672

OSTI ID:: 1393694

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 111 Journal Issue: 12; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 106 works

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References (21)

High performance continuous wave 1.3 μ m quantum dot lasers on silicon Liu, Alan Y.; Zhang, Chong; Norman, Justin Applied Physics Letters, Vol. 104, Issue 4 https://doi.org/10.1063/1.4863223	journal	January 2014
1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C Shchekin, O. B.; Deppe, D. G. Applied Physics Letters, Vol. 80, Issue 18 https://doi.org/10.1063/1.1476708	journal	May 2002
The commercialization of silicon photonics Rickman, Andrew Nature Photonics, Vol. 8, Issue 8 https://doi.org/10.1038/nphoton.2014.175	journal	July 2014
Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained‐layer superlattices Yamaguchi, Masafumi; Sugo, Mitsuru; Itoh, Yoshio Applied Physics Letters, Vol. 54, Issue 25 https://doi.org/10.1063/1.101052	journal	June 1989
Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions Németh, I.; Kunert, B.; Stolz, W. Journal of Crystal Growth, Vol. 310, Issue 7-9 https://doi.org/10.1016/j.jcrysgro.2007.11.127	journal	April 2008
Molecular beam epitaxial growths of high-optical-gain InAs quantum dots on GaAs for long-wavelength emission Nishi, K.; Kageyama, T.; Yamaguchi, M. Journal of Crystal Growth, Vol. 378 https://doi.org/10.1016/j.jcrysgro.2012.12.046	journal	September 2013
Energy-efficient communication Asghari, Mehdi; Krishnamoorthy, Ashok V. Nature Photonics, Vol. 5, Issue 5 https://doi.org/10.1038/nphoton.2011.68	journal	May 2011
On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende‐on‐diamond systems Kroemer, Herbert; Polasko, Kenneth J.; Wright, Steve C. Applied Physics Letters, Vol. 36, Issue 9 https://doi.org/10.1063/1.91643	journal	May 1980
Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si Norman, Justin; Kennedy, M. J.; Selvidge, Jennifer Optics Express, Vol. 25, Issue 4 https://doi.org/10.1364/OE.25.003927	journal	January 2017
Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operation Fukuda, M.; Okayasu, M.; Temmyo, J. IEEE Journal of Quantum Electronics, Vol. 30, Issue 2 https://doi.org/10.1109/3.283796	journal	January 1994
13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates Wang, Ting; Liu, Huiyun; Lee, Andrew Optics Express, Vol. 19, Issue 12 https://doi.org/10.1364/OE.19.011381	journal	January 2011
Recent advances in silicon photonic integrated circuits Bowers, John E.; Komljenovic, Tin; Davenport, Michael SPIE OPTO, SPIE Proceedings https://doi.org/10.1117/12.2221943	conference	February 2016
MBE growth of P-doped 1.3 μ m InAs quantum dot lasers on silicon Liu, Alan Y.; Zhang, Chong; Snyder, Andrew Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 2 https://doi.org/10.1116/1.4864148	journal	March 2014
InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates Lee, A. D. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 19, Issue 4 https://doi.org/10.1109/JSTQE.2013.2247979	journal	July 2013
Electrically pumped continuous-wave III–V quantum dot lasers on silicon Chen, Siming; Li, Wei; Wu, Jiang Nature Photonics, Vol. 10, Issue 5 https://doi.org/10.1038/nphoton.2016.21	journal	March 2016
Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates Chen, Siming; Liao, Mengya; Tang, Mingchu Optics Express, Vol. 25, Issue 5 https://doi.org/10.1364/OE.25.004632	journal	January 2017
Electrically pumped continuous-wave 13 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si Liu, Alan Y.; Peters, Jon; Huang, Xue Optics Letters, Vol. 42, Issue 2 https://doi.org/10.1364/OL.42.000338	journal	January 2017
Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon Liu, Alan Y.; Herrick, Robert W.; Ueda, Osamu IEEE Journal of Selected Topics in Quantum Electronics, Vol. 21, Issue 6 https://doi.org/10.1109/JSTQE.2015.2418226	journal	November 2015
Improvement of catastrophic optical damage level of AlGaInP visible laser diodes by sulfur treatment Kamiyama, Satoshi; Mori, Yoshihiro; Takahashi, Yasuhito Applied Physics Letters, Vol. 58, Issue 23 https://doi.org/10.1063/1.104833	journal	June 1991
Thermal annealing effects of defect reduction in GaAs on Si substrates Yamaguchi, Masafumi; Tachikawa, Masami; Itoh, Yoshio Journal of Applied Physics, Vol. 68, Issue 9 https://doi.org/10.1063/1.346156	journal	November 1990
Threading dislocation density characterization in III–V photovoltaic materials by electron channeling contrast imaging Yaung, Kevin Nay; Kirnstoetter, Stefan; Faucher, Joseph Journal of Crystal Growth, Vol. 453 https://doi.org/10.1016/j.jcrysgro.2016.08.015	journal	November 2016

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