Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si

Journal Article · Sun Mar 01 00:00:00 EST 2020 · IEEE Journal of Selected Topics in Quantum Electronics

DOI:https://doi.org/10.1109/JSTQE.2020.2964381· OSTI ID:1836324

Wan, Yating ; Shang, Chen; Norman, Justin ; Shi, Bei ; Li, Qiang; Collins, Noelle; Dumont, Mario; Lau, Kei May ; Gossard, Arthur C.; Bowers, John E.

We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of 3 × 10 ⁷ cm ^-2 . Room-temperature cw lasing at ~1.3 μm has been achieved, with a minimum threshold current density of 34.6 A/cm ² per layer, a maximum operating temperature of 80 °C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.

• Research Organization: Univ. of California, Santa Barbara, CA (United States)
• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• Grant/Contract Number: AR0001042; 16245216; ITS/273/16FP
• OSTI ID: 1836324
• Alternate ID(s): OSTI ID: 1799139; OSTI ID: 1861124
• Journal Information: IEEE Journal of Selected Topics in Quantum Electronics, Journal Name: IEEE Journal of Selected Topics in Quantum Electronics Vol. 26 Journal Issue: 2; ISSN 1077-260X
• Publisher: Institute of Electrical and Electronics Engineers
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING