Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE

Journal Article · Wed Apr 01 00:00:00 EDT 2015 · Materials Letters

DOI:https://doi.org/10.1016/j.matlet.2014.12.017· OSTI ID:1392638

Ying, Minju; Cheng, Wei; Wang, Xiaoxiao; Liao, Bin; Zhang, Xu; Mei, Zengxia; Du, Xiaolong; Heald, Steve M.; Blythe, Harry J.; Mark Fox, A.; Gehring, Gillian A.

O-polar and Zn-polar ZnO films were prepared by rf-plasma assisted molecular beam epitaxy (MBE) on sapphire substrates. Arsenic ions have been implanted into high quality ZnO with a definite polarity. Substantial temperature-independent ferromagnetism has been observed for both films, with the O-polar film having approximately twice the magnetization as the Zn-polar film. The saturation magnetization is shown to be due to the defects introduced during implantation, rather than to local moments associated with the As ion. Rutherford Backscattering/Channeling and optical absorption measurements confirm that the implantation introduces more defect states in the O-polar films, while X-ray absorption near-edge structure measurements show that the environment of the arsenic ions was similar for both polarities. (C) 2014 Elsevier B.V. All rights reserved.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC)
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 1392638
• Journal Information: Materials Letters, Vol. 144, Issue C; ISSN 0167-577X
• Publisher: Elsevier
• Country of Publication: United States
• Language: English

Related Subjects

Doped ZnO
Ferromagnetism
Ion Implantation