Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO ₃ )

Journal Article · Wed Sep 13 00:00:00 EDT 2017 · Journal of the American Chemical Society

DOI:https://doi.org/10.1021/jacs.7b07506· OSTI ID:1390338

Chen, Jie  ^[1]; Morrow, Darien J.  ^[2]; Fu, Yongping  ^[2]; Zheng, Weihao ^[3]; Zhao, Yuzhou ^[2]; Dang, Lianna ^[2]; Stolt, Matthew J.  ^[2]; Kohler, Daniel D. ^[2]; Wang, Xiaoxia ^[3]; Czech, Kyle J. ^[2]; Hautzinger, Matthew P. ^[2]; Shen, Shaohua ^[4]; Guo, Liejin  ^[4]; Pan, Anlian  ^[3]; Wright, John C. ^[2]; Jin, Song  ^[2]

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1. Department of Chemistry, University of Wisconsin—Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States, International Research Center for Renewable Energy, State Key Laboratory of Multiphase Flow in Power Engineering, Xi’an Jiaotong University, Shaanxi 710049, P. R. China
2. Department of Chemistry, University of Wisconsin—Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
3. Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha 410082, P. R. China
4. International Research Center for Renewable Energy, State Key Laboratory of Multiphase Flow in Power Engineering, Xi’an Jiaotong University, Shaanxi 710049, P. R. China

High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr₃) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO₃(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcoming the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr₃ epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10⁴ cm s^–1), and low defect density of 10¹² cm^–3, which are comparable to those of CsPbBr₃ single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.

• Research Organization: Univ. of Wisconsin, Madison, WI (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: FG02-09ER46664; SC0002162
• OSTI ID: 1390338
• Alternate ID(s): OSTI ID: 1417657
• Journal Information: Journal of the American Chemical Society, Journal Name: Journal of the American Chemical Society Vol. 139 Journal Issue: 38; ISSN 0002-7863
• Publisher: American Chemical Society
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY