Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites

Bruevich, Vladimir; Kasaei, Leila; Rangan, Sylvie; Hijazi, Hussein; Zhang, Zhenyuan; Emge, Thomas; Andrei, Eva Y.; Bartynski, Robert A.; Feldman, Leonard C.; Podzorov, Vitaly

doi:10.1002/adma.202205055

Title: Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites

Journal Article · Sun Sep 25 00:00:00 EDT 2022 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202205055· OSTI ID:1889328

Bruevich, Vladimir ^[1]; Kasaei, Leila ^[1]; Rangan, Sylvie ^[1]; Hijazi, Hussein ^[1]; Zhang, Zhenyuan ^[1]; Emge, Thomas ^[2]; Andrei, Eva Y. ^[1]; Bartynski, Robert A. ^[1]; Feldman, Leonard C. ^[1];

^[1]

Dept. of Physics and Astronomy Rutgers University 136 Frelinghuysen Road Piscataway NJ 08854 USA
Wright‐Rieman Laboratories Rutgers University 610 Taylor Road Piscataway NJ 08854 USA

Abstract The first experimental realization of the intrinsic (not dominated by defects) charge conduction regime in lead‐halide perovskite field‐effect transistors (FETs) is reported. The advance is enabled by: i) a new vapor‐phase epitaxy technique that results in large‐area single‐crystalline cesium lead bromide (CsPbBr ₃ ) films with excellent structural and surface properties, including atomically flat surface morphology, essentially free from defects and traps at the level relevant to device operation; ii) an extensive materials analysis of these films using a variety of thin‐film and surface probes certifying the chemical and structural quality of the material; and iii) the fabrication of nearly ideal (trap‐free) FETs with characteristics superior to any reported to date. These devices allow the investigation of the intrinsic FET and (gated) Hall‐effect carrier mobilities as functions of temperature. The intrinsic mobility is found to increase on cooling from ≈30 cm ² V ⁻¹ s ⁻¹ at room temperature to ≈250 cm ² V ⁻¹ s ⁻¹ at 50 K, revealing a band transport limited by phonon scattering. Establishing the intrinsic (phonon‐limited) mobility provides a solid test for theoretical descriptions of carrier transport in perovskites, reveals basic limits to the technology, and points to a path for future high‐performance perovskite electronic devices.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DOE‐FG02‐99ER45742

OSTI ID:: 1889328

Alternate ID(s):: OSTI ID: 1894750

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Vol. 34 Journal Issue: 43; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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