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Title: Formation and evolution of ripples on ion-irradiated semiconductor surfaces

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4863471· OSTI ID:1383302

We have examined the formation and evolution of ripples on focused-ion-beam (FIB) irradiated compound semiconductor surfaces. Using initially normal-incidence Ga+ FIB irradiation of InSb, we tuned the local beam incidence angle (θeff) by varying the pitch and/or dwell time. For single-pass FIB irradiation, increasing θeff induces morphological evolution from pits and islands to ripples to featureless surfaces. Multiple-pass FIB irradiation of the rippled surfaces at a fixed θeff leads to island formation on the ripple crests, followed by nanorod (NR) growth. Finally, this ripple-NR transition provides an alternative approach for achieving dense arrays of NRs.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC); Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0000957
OSTI ID:
1383302
Journal Information:
Applied Physics Letters, Vol. 104, Issue 5; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 14 works
Citation information provided by
Web of Science

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