Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN

Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

doi:10.1063/1.4841575

Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN

Journal Article · Sun Dec 01 23:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4841575· OSTI ID:1382878

Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE SC Office of Basic Energy Sciences (SC-22)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1382878

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 103; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (14)

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN Koleske, D. D.; Wickenden, A. E.; Henry, R. L. Journal of Crystal Growth, Vol. 242, Issue 1-2 https://doi.org/10.1016/S0022-0248(02)01348-9	journal	July 2002
Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Zhang, Z.; Hurni, C. A.; Arehart, A. R. Applied Physics Letters, Vol. 100, Issue 5 https://doi.org/10.1063/1.3682528	journal	January 2012
Blue-Green InGaN/GaN Laser Diodes on Miscut m -Plane GaN Substrate Lin, You-Da; Hardy, Matthew T.; Hsu, Po Shan Applied Physics Express, Vol. 2 https://doi.org/10.1143/APEX.2.082102	journal	July 2009
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN Hirai, A.; Jia, Z.; Schmidt, M. C. Applied Physics Letters, Vol. 91, Issue 19 https://doi.org/10.1063/1.2802570	journal	November 2007
Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors Pässler, Roland Journal of Applied Physics, Vol. 96, Issue 1 https://doi.org/10.1063/1.1753076	journal	July 2004
Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping Noemaun, Ahmed N.; Schubert, Martin F.; Cho, Jaehee Applied Physics Letters, Vol. 96, Issue 12 https://doi.org/10.1063/1.3371812	journal	March 2010
First-principles calculations for defects and impurities: Applications to III-nitrides Van de Walle, Chris G.; Neugebauer, Jörg Journal of Applied Physics, Vol. 95, Issue 8 https://doi.org/10.1063/1.1682673	journal	April 2004
Assessment of deep level defects in m -plane GaN grown by metalorganic chemical vapor deposition Henry, T. A.; Armstrong, A.; Kelchner, K. M. Applied Physics Letters, Vol. 100, Issue 8 https://doi.org/10.1063/1.3687700	journal	February 2012
Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes Kelchner, Kathryn M.; Farrell, Robert M.; Lin, You-Da Applied Physics Express, Vol. 3, Issue 9 https://doi.org/10.1143/APEX.3.092103	journal	September 2010
Role of carbon in GaN Seager, C. H.; Wright, A. F.; Yu, J. Journal of Applied Physics, Vol. 92, Issue 11 https://doi.org/10.1063/1.1518794	journal	December 2002
Carbon impurities and the yellow luminescence in GaN Lyons, J. L.; Janotti, A.; Van de Walle, C. G. Applied Physics Letters, Vol. 97, Issue 15 https://doi.org/10.1063/1.3492841	journal	October 2010
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates Farrell, R. M.; Haeger, D. A.; Chen, X. Applied Physics Letters, Vol. 96, Issue 23 https://doi.org/10.1063/1.3447926	journal	June 2010
Substitutional and interstitial carbon in wurtzite GaN Wright, A. F. Journal of Applied Physics, Vol. 92, Issue 5 https://doi.org/10.1063/1.1498879	journal	September 2002
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon Armstrong, A.; Arehart, A. R.; Green, D. Journal of Applied Physics, Vol. 98, Issue 5 https://doi.org/10.1063/1.2005379	journal	September 2005

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