Influence of Growth Temperature and Temperature Ramps on Deep Level Defect Incorporation in m-plane GaN.

Journal Article · Sat Nov 30 23:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4841575· OSTI ID:1123404

Armstrong, Andrew; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

Abstract not provided.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1123404
• Report Number(s): SAND2013-10610J; 492202
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 103; ISSN 0003-6951
• Country of Publication: United States
• Language: English