Comparison between blue lasers and light-emitting diodes for future solid-state lighting: Comparison between blue lasers and light-emitting diodes

Wierer, Jonathan J.; Tsao, Jeffrey Y.; Sizov, Dmitry S.

doi:10.1002/lpor.201300048

Title: Comparison between blue lasers and light-emitting diodes for future solid-state lighting: Comparison between blue lasers and light-emitting diodes

Journal Article · Thu Aug 01 00:00:00 EDT 2013 · Laser & Photonics Reviews

DOI:https://doi.org/10.1002/lpor.201300048· OSTI ID:1382673

Wierer, Jonathan J. ^[1]; Tsao, Jeffrey Y. ^[1]; Sizov, Dmitry S. ^[2]

Sandia National Laboratories, Albuquerque NM 87185 USA
Corning Incorporated, One Science Center Dr., Corning NY 14831 USA

Cite

Export

Save

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1382673

Journal Information:: Laser & Photonics Reviews, Vol. 7, Issue 6; Related Information: SSLS partners with Sandia National Laboratories (lead); California Institute of Technology; University of California, Irvine, Merced, and Santa Barbara; Los Alamos National Laboratory; University of New Mexico; Northwestern University; Philips Lumileds Lighting; ISSN 1863-8880

Publisher:: Wiley

Country of Publication:: United States

Language:: English

References (70)

Impact of active layer design on InGaN radiative recombination coefficient and LED performance Li, X.; Okur, S.; Zhang, F. Journal of Applied Physics, Vol. 111, Issue 6 https://doi.org/10.1063/1.3699199	journal	March 2012
Solid-state lighting: ‘The case’ 10 years after and future prospects Haitz, Roland; Tsao, Jeffrey Y. physica status solidi (a), Vol. 208, Issue 1 https://doi.org/10.1002/pssa.201026349	journal	September 2010
30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes Schnitzer, I.; Yablonovitch, E.; Caneau, C. Applied Physics Letters, Vol. 63, Issue 16 https://doi.org/10.1063/1.110575	journal	October 1993
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina Journal of Display Technology, Vol. 3, Issue 2, p. 160-175 https://doi.org/10.1109/JDT.2007.895339	journal	June 2007
Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes Sizov, D. S.; Bhat, R.; Zakharian, A. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, Issue 5 https://doi.org/10.1109/JSTQE.2011.2116770	journal	September 2011
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes Kawaguchi, Yoshinobu; Huang, Chia-Yen; Wu, Yuh-Renn Applied Physics Letters, Vol. 100, Issue 23 https://doi.org/10.1063/1.4726106	journal	June 2012
Gallium Indium Nitride-Based Green Lasers Sizov, Dmitry; Bhat, Rajaram; Zah, Chung-En Journal of Lightwave Technology, Vol. 30, Issue 5 https://doi.org/10.1109/JLT.2011.2176918	journal	March 2012
Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun Applied Physics Letters, Vol. 93, Issue 17 https://doi.org/10.1063/1.3005640	journal	October 2008
Local indium segregation and bang gap variations in high efficiency green light emitting InGaN/GaN diodes Jinschek, J. R.; Erni, R.; Gardner, N. F. Solid State Communications, Vol. 137, Issue 4 https://doi.org/10.1016/j.ssc.2005.10.030	journal	January 2006
Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs Kim, Kwang-Choong; Schmidt, Mathew C.; Sato, Hitoshi physica status solidi (RRL) – Rapid Research Letters, Vol. 1, Issue 3, p. 125-127 https://doi.org/10.1002/pssr.200701061	journal	May 2007
Stress relaxation and critical thickness for misfit dislocation formation in (101¯0) and (3031¯) InGaN/GaN heteroepitaxy Shan Hsu, Po; Hardy, Matthew T.; Young, Erin C. Applied Physics Letters, Vol. 100, Issue 17 https://doi.org/10.1063/1.4707160	journal	April 2012
Performance of high-power III-nitride light emitting diodes Chen, G.; Craven, M.; Kim, A. physica status solidi (a), Vol. 205, Issue 5 https://doi.org/10.1002/pssa.200778747	journal	May 2008
Microscopic theory of gain for an InGaN/AlGaN quantum well laser Chow, W. W.; Wright, A. F.; Girndt, A. Applied Physics Letters, Vol. 71, Issue 18 https://doi.org/10.1063/1.120155	journal	November 1997
Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes Scheibenzuber, W. G.; Schwarz, U. T.; Veprek, R. G. Physical Review B, Vol. 80, Issue 11 https://doi.org/10.1103/PhysRevB.80.115320	journal	September 2009
LEDs for Solid-State Lighting: Performance Challenges and Recent Advances Crawford, M. H. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, Issue 4 https://doi.org/10.1109/JSTQE.2009.2013476	journal	July 2009
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence Kumakura, K.; Makimoto, T.; Kobayashi, N. Applied Physics Letters, Vol. 86, Issue 5 https://doi.org/10.1063/1.1861116	journal	January 2005
Bulk GaN based violet light-emitting diodes with high efficiency at very high current density Cich, Michael J.; Aldaz, Rafael I.; Chakraborty, Arpan Applied Physics Letters, Vol. 101, Issue 22 https://doi.org/10.1063/1.4769228	journal	November 2012
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2 Gardner, N. F.; Müller, G. O.; Shen, Y. C. Applied Physics Letters, Vol. 91, Issue 24 https://doi.org/10.1063/1.2807272	journal	December 2007
High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes Pan, Chih-Chien; Tanaka, Shinichi; Wu, Feng Applied Physics Express, Vol. 5, Issue 6 https://doi.org/10.1143/APEX.5.062103	journal	June 2012
On the importance of radiative and Auger losses in GaN-based quantum wells Hader, J.; Moloney, J. V.; Pasenow, B. Applied Physics Letters, Vol. 92, Issue 26 https://doi.org/10.1063/1.2953543	journal	June 2008
Electronic and Optical Properties of ${\rm a}$- and ${\rm m}$-Plane Wurtzite InGaN–GaN Quantum Wells Park, Seoung-Hwan; Ahn, Doyeol; Chuang, Shun-Lien IEEE Journal of Quantum Electronics, Vol. 43, Issue 12 https://doi.org/10.1109/JQE.2007.905009	journal	December 2007
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes Zhao, Hongping; Liu, Guangyu; Arif, Ronald A. Solid-State Electronics, Vol. 54, Issue 10 https://doi.org/10.1016/j.sse.2010.05.019	journal	October 2010
GaN decomposition in H2 and N2 at MOVPE temperatures and pressures Koleske, D. D.; Wickenden, A. E.; Henry, R. L. Journal of Crystal Growth, Vol. 223, Issue 4 https://doi.org/10.1016/S0022-0248(01)00617-0	journal	March 2001
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop Iveland, Justin; Martinelli, Lucio; Peretti, Jacques Physical Review Letters, Vol. 110, Issue 17 https://doi.org/10.1103/PhysRevLett.110.177406	journal	April 2013
On the origin of IQE-‘droop’ in InGaN LEDs Laubsch, Ansgar; Sabathil, Matthias; Bergbauer, Werner physica status solidi (c), Vol. 6, Issue S2 https://doi.org/10.1002/pssc.200880950	journal	May 2009
Origin of efficiency droop in GaN-based light-emitting diodes Kim, Min-Ho; Schubert, Martin F.; Dai, Qi Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2800290	journal	October 2007
White light emitting diodes with super-high luminous efficacy Narukawa, Yukio; Ichikawa, Masatsugu; Sanga, Daisuke Journal of Physics D: Applied Physics, Vol. 43, Issue 35 https://doi.org/10.1088/0022-3727/43/35/354002	journal	August 2010
Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 97, Issue 3 https://doi.org/10.1063/1.3462916	journal	July 2010
Solid-state lighting: an energy-economics perspective Tsao, J. Y.; Saunders, H. D.; Creighton, J. R. Journal of Physics D: Applied Physics, Vol. 43, Issue 35 https://doi.org/10.1088/0022-3727/43/35/354001	journal	August 2010
High performance thin-film flip-chip InGaN–GaN light-emitting diodes Shchekin, O. B.; Epler, J. E.; Trottier, T. A. Applied Physics Letters, Vol. 89, Issue 7 https://doi.org/10.1063/1.2337007	journal	August 2006
COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As _{1− x} P _x ) JUNCTIONS Holonyak, Nick; Bevacqua, S. F. Applied Physics Letters, Vol. 1, Issue 4 https://doi.org/10.1063/1.1753706	journal	December 1962
On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms Dai, Qi; Shan, Qifeng; Cho, Jaehee Applied Physics Letters, Vol. 98, Issue 3 https://doi.org/10.1063/1.3544584	journal	January 2011
Efficiency droop in light-emitting diodes: Challenges and countermeasures: Efficiency droop in light-emitting diodes: Challenges and countermeasures Cho, Jaehee; Schubert, E. Fred; Kim, Jong Kyu Laser & Photonics Reviews, Vol. 7, Issue 3 https://doi.org/10.1002/lpor.201200025	journal	January 2013
Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm Pope, I. A.; Smowton, P. M.; Blood, P. Applied Physics Letters, Vol. 82, Issue 17 https://doi.org/10.1063/1.1570515	journal	April 2003
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes Kioupakis, Emmanouil; Yan, Qimin; Van de Walle, Chris G. Applied Physics Letters, Vol. 101, Issue 23 https://doi.org/10.1063/1.4769374	journal	December 2012
Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes Tomiya, S.; Hino, T.; Goto, S. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 10, Issue 6 https://doi.org/10.1109/JSTQE.2004.837735	journal	November 2004
Maximum White Luminous Efficacy of Radiation Versus Color Rendering Index and Color Temperature: Exact Results and a Useful Analytic Expression Hung, Po-Chieh; Tsao, Jeffrey Y. Journal of Display Technology, Vol. 9, Issue 6 https://doi.org/10.1109/JDT.2012.2224638	journal	June 2013
Four-color laser white illuminant demonstrating high color-rendering quality Neumann, A.; Wierer, J. J.; Davis, W. Optics Express, Vol. 19, Issue S4 https://doi.org/10.1364/OE.19.00A982	journal	January 2011
Free-carrier absorption in nitrides from first principles Kioupakis, Emmanouil; Rinke, Patrick; Schleife, André Physical Review B, Vol. 81, Issue 24 https://doi.org/10.1103/PhysRevB.81.241201	journal	June 2010
Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency Lin, Guan-Bo; Meyaard, David; Cho, Jaehee Applied Physics Letters, Vol. 100, Issue 16 https://doi.org/10.1063/1.4704366	journal	April 2012
Microstructure and electronic properties of InGaN alloys Ponce, F. A.; Srinivasan, S.; Bell, A. physica status solidi (b), Vol. 240, Issue 2 https://doi.org/10.1002/pssb.200303527	journal	November 2003
Luminescence properties of thick InGaN quantum-wells Laubsch, Ansgar; Bergbauer, Werner; Sabathil, Matthias physica status solidi (c), Vol. 6, Issue S2 https://doi.org/10.1002/pssc.200880893	journal	January 2009
Efficiency droop in nitride-based light-emitting diodes Piprek, Joachim physica status solidi (a), Vol. 207, Issue 10, p. 2217-2225 https://doi.org/10.1002/pssa.201026149	journal	July 2010
Diode Lasers and Photonic Integrated Circuits Coldren, Larry A.; Corzine, Scott W.; Mašanović, Milan L. John Wiley & Sons, Inc. https://doi.org/10.1002/9781118148167	book	January 2012
Solid phase immiscibility in GaInN Ho, I‐hsiu; Stringfellow, G. B. Applied Physics Letters, Vol. 69, Issue 18 https://doi.org/10.1063/1.117683	journal	October 1996
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Zhao, Yuji; Yan, Qimin; Huang, Chia-Yen Applied Physics Letters, Vol. 100, Issue 20 https://doi.org/10.1063/1.4719100	journal	May 2012
Solid-State Lighting: An Integrated Human Factors, Technology, and Economic Perspective Tsao, Jeffrey Y.; Coltrin, Michael E.; Crawford, Mary H. Proceedings of the IEEE, Vol. 98, Issue 7 https://doi.org/10.1109/JPROC.2009.2031669	journal	July 2010
Solid-state lighting: lamps, chips, and materials for tomorrow Tsao, J. Y. IEEE Circuits and Devices Magazine, Vol. 20, Issue 3, p. 28-37 https://doi.org/10.1109/MCD.2004.1304539	journal	May 2004
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green Zhang, L. Q.; Jiang, D. S.; Zhu, J. J. Journal of Applied Physics, Vol. 105, Issue 2, Article No. 023104 https://doi.org/10.1063/1.3068182	journal	January 2009
p ‐type conduction in Mg‐doped GaN and Al _0.08 Ga _0.92 N grown by metalorganic vapor phase epitaxy Tanaka, T.; Watanabe, A.; Amano, H. Applied Physics Letters, Vol. 65, Issue 5 https://doi.org/10.1063/1.112309	journal	August 1994
Solid-State Light Sources Getting Smart Schubert, E. F. Science, Vol. 308, Issue 5726 https://doi.org/10.1126/science.1108712	journal	May 2005
Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping Noemaun, Ahmed N.; Schubert, Martin F.; Cho, Jaehee Applied Physics Letters, Vol. 96, Issue 12 https://doi.org/10.1063/1.3371812	journal	March 2010
Recent results of blue and green InGaN laser diodes for laser projection Lutgen, Stephan; Dini, Dimitri; Pietzonka, Ines SPIE OPTO, SPIE Proceedings https://doi.org/10.1117/12.874757	conference	February 2011
Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes Liu, J. P.; Ryou, J. -H.; Dupuis, R. D. Applied Physics Letters, Vol. 93, Issue 2 https://doi.org/10.1063/1.2957667	journal	July 2008
Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting Feezell, Daniel F.; Speck, James S.; DenBaars, Steven P. Journal of Display Technology, Vol. 9, Issue 4 https://doi.org/10.1109/JDT.2012.2227682	journal	April 2013
Highly efficient all-nitride phosphor-converted white light emitting diode Mueller-Mach, Regina; Mueller, Gerd; Krames, Michael R. physica status solidi (a), Vol. 202, Issue 9, p. 1727-1732 https://doi.org/10.1002/pssa.200520045	journal	July 2005
New developments in green LEDs: New developments in green LEDs Peter, Matthias; Laubsch, Ansgar; Bergbauer, Werner physica status solidi (a), Vol. 206, Issue 6 https://doi.org/10.1002/pssa.200880926	journal	March 2009
Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop Schubert, Martin F.; Xu, Jiuru; Kim, Jong Kyu Applied Physics Letters, Vol. 93, Issue 4 https://doi.org/10.1063/1.2963029	journal	July 2008
Thermal ionization energy of Si and Mg in AlGaN Katsuragawa, Maki; Sota, Shigetoshi; Komori, Miho Journal of Crystal Growth, Vol. 189-190 https://doi.org/10.1016/S0022-0248(98)00345-5	journal	June 1998
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis David, Aurélien; Grundmann, Michael J. Applied Physics Letters, Vol. 96, Issue 10 https://doi.org/10.1063/1.3330870	journal	March 2010
Assessment of various LED structure designs for high-current operation Bulashevich, K. A.; Ramm, M. S.; Karpov, S. Yu. physica status solidi (c), Vol. 6, Issue S2 https://doi.org/10.1002/pssc.200880751	journal	January 2009
High Power and High External Efficiency m -Plane InGaN Light Emitting Diodes Schmidt, Mathew C.; Kim, Kwang-Choong; Sato, Hitoshi Japanese Journal of Applied Physics, Vol. 46, Issue No. 7 https://doi.org/10.1143/JJAP.46.L126	journal	February 2007
Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes Dai, Qi; Shan, Qifeng; Wang, Jing Applied Physics Letters, Vol. 97, Issue 13 https://doi.org/10.1063/1.3493654	journal	September 2010
Recombination coefficients of GaN-based laser diodes Scheibenzuber, W. G.; Schwarz, U. T.; Sulmoni, L. Journal of Applied Physics, Vol. 109, Issue 9 https://doi.org/10.1063/1.3585872	journal	May 2011
Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells Schade, L.; Schwarz, U. T.; Wernicke, T. physica status solidi (b), Vol. 248, Issue 3 https://doi.org/10.1002/pssb.201046350	journal	February 2011
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes Kioupakis, Emmanouil; Rinke, Patrick; Delaney, Kris T. Applied Physics Letters, Vol. 98, Issue 16 https://doi.org/10.1063/1.3570656	journal	April 2011
Auger recombination in InGaN measured by photoluminescence Shen, Y. C.; Mueller, G. O.; Watanabe, S. Applied Physics Letters, Vol. 91, Issue 14 https://doi.org/10.1063/1.2785135	journal	October 2007
Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes David, Aurélien; Grundmann, Michael J.; Kaeding, John F. Applied Physics Letters, Vol. 92, Issue 5 https://doi.org/10.1063/1.2839305	journal	February 2008
Gain comparison in polar and nonpolar\ssty{/} semipolar gallium-nitride-based laser diodes Melo, T.; Hu, Y-L; Weisbuch, C. Semiconductor Science and Technology, Vol. 27, Issue 2 https://doi.org/10.1088/0268-1242/27/2/024015	journal	January 2012
Droop in III-nitrides: Comparison of bulk and injection contributions David, Aurélien; Gardner, Nathan F. Applied Physics Letters, Vol. 97, Issue 19 https://doi.org/10.1063/1.3515851	journal	November 2010

Similar Records

Comparison between blue lasers and light-emitting diodes for future solid-state lighting: Comparison between blue lasers and light-emitting diodes

Journal Article · Thu Aug 01 00:00:00 EDT 2013 · Laser & Photonics Reviews · OSTI ID:1382673

Wierer, Jonathan J.; Tsao, Jeffrey Y.; Sizov, Dmitry S.

Comparison between blue lasers and light-emitting diodes for future solid-state lighting

Journal Article · Thu Aug 01 00:00:00 EDT 2013 · Laser Photonics Rev. · OSTI ID:1382673

Wierer, Jonathan J.; Tsao, Jeffrey Y.; Sizov, Dmitry S.

The potential of ill-nitride laser diodes for solid-state lighting [Advantages of III-Nitride Laser Diodes in Solid-State Lighting]

Journal Article · Mon Sep 01 00:00:00 EDT 2014 · Physica Status Solidi C · OSTI ID:1382673

Wierer, Jonathan; Tsao, Jeffrey Y.

Related Subjects

solar (photovoltaic)
solid state lighting
phonons
materials and chemistry by design
optics
synthesis (novel materials)

Title: Comparison between blue lasers and light-emitting diodes for future solid-state lighting: Comparison between blue lasers and light-emitting diodes

Citation Formats

References (70)

Similar Records

Related Subjects