Highly nonlinear defect-induced carrier recombination rates in semiconductors

Modine, N. A.; Armstrong, A. M.; Crawford, M. H.; Chow, W. W.

doi:10.1063/1.4824065

Highly nonlinear defect-induced carrier recombination rates in semiconductors

Journal Article · Mon Oct 14 00:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4824065· OSTI ID:1382553

Modine, N. A.; Armstrong, A. M.; Crawford, M. H.; Chow, W. W.

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE SC Office of Basic Energy Sciences (SC-22)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1382553

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 14 Vol. 114; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (27)

Electron-Hole Recombination in Germanium Hall, R. N. Physical Review, Vol. 87, Issue 2 https://doi.org/10.1103/PhysRev.87.387	journal	July 1952
Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes Armstrong, A.; Henry, T. A.; Koleske, D. D. Optics Express, Vol. 20, Issue S6 https://doi.org/10.1364/OE.20.00A812	journal	January 2012
Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge Conditions Sah, Chih-Tang; Shockley, W. Physical Review, Vol. 109, Issue 4 https://doi.org/10.1103/PhysRev.109.1103	journal	February 1958
Auger recombination rates in nitrides from first principles Delaney, Kris T.; Rinke, Patrick; Van de Walle, Chris G. Applied Physics Letters, Vol. 94, Issue 19 https://doi.org/10.1063/1.3133359	journal	May 2009
Model for the Electronic Structure of Amorphous Semiconductors Anderson, P. W. Physical Review Letters, Vol. 34, Issue 15 https://doi.org/10.1103/PhysRevLett.34.953	journal	April 1975
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina Journal of Display Technology, Vol. 3, Issue 2, p. 160-175 https://doi.org/10.1109/JDT.2007.895339	journal	June 2007
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop Iveland, Justin; Martinelli, Lucio; Peretti, Jacques Physical Review Letters, Vol. 110, Issue 17 https://doi.org/10.1103/PhysRevLett.110.177406	journal	April 2013
Simple intrinsic defects in gallium arsenide Schultz, Peter A.; von Lilienfeld, O. Anatole Modelling and Simulation in Materials Science and Engineering, Vol. 17, Issue 8 https://doi.org/10.1088/0965-0393/17/8/084007	journal	November 2009
Droop in III-nitrides: Comparison of bulk and injection contributions David, Aurélien; Gardner, Nathan F. Applied Physics Letters, Vol. 97, Issue 19 https://doi.org/10.1063/1.3515851	journal	November 2010
Nature of deep center emissions in GaN Sedhain, A.; Li, J.; Lin, J. Y. Applied Physics Letters, Vol. 96, Issue 15 https://doi.org/10.1063/1.3389497	journal	April 2010
Phosphorus vacancy in InP: A negative-Ucenter Alatalo, M.; Nieminen, R. M.; Puska, M. J. Physical Review B, Vol. 47, Issue 11 https://doi.org/10.1103/PhysRevB.47.6381	journal	March 1993
LEDs for Solid-State Lighting: Performance Challenges and Recent Advances Crawford, M. H. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, Issue 4 https://doi.org/10.1109/JSTQE.2009.2013476	journal	July 2009
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films Zhao, D. G.; Jiang, D. S.; Zhu, J. J. Applied Physics Letters, Vol. 95, Issue 4 https://doi.org/10.1063/1.3187540	journal	July 2009
High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$ Zhao, Yuji; Tanaka, Shinichi; Pan, Chih-Chien Applied Physics Express, Vol. 4, Issue 8 https://doi.org/10.1143/APEX.4.082104	journal	July 2011
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes Kioupakis, Emmanouil; Rinke, Patrick; Delaney, Kris T. Applied Physics Letters, Vol. 98, Issue 16 https://doi.org/10.1063/1.3570656	journal	April 2011
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes Hader, J.; Moloney, J. V.; Koch, S. W. Applied Physics Letters, Vol. 96, Issue 22 https://doi.org/10.1063/1.3446889	journal	May 2010
Density-functional-theory calculations for the silicon vacancy Wright, A. F. Physical Review B, Vol. 74, Issue 16 https://doi.org/10.1103/PhysRevB.74.165116	journal	October 2006
Diffusivity of native defects in GaN Limpijumnong, Sukit; Van de Walle, Chris Physical Review B, Vol. 69, Issue 3 https://doi.org/10.1103/PhysRevB.69.035207	journal	January 2004
Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model Chow, W. W.; Crawford, M. H.; Tsao, J. Y. Applied Physics Letters, Vol. 97, Issue 12 https://doi.org/10.1063/1.3490232	journal	September 2010
Statistics of the Recombinations of Holes and Electrons Shockley, W.; Read, W. T. Physical Review, Vol. 87, Issue 5 https://doi.org/10.1103/PhysRev.87.835	journal	September 1952
Carbon impurities and the yellow luminescence in GaN Lyons, J. L.; Janotti, A.; Van de Walle, C. G. Applied Physics Letters, Vol. 97, Issue 15 https://doi.org/10.1063/1.3492841	journal	October 2010
On the importance of radiative and Auger losses in GaN-based quantum wells Hader, J.; Moloney, J. V.; Pasenow, B. Applied Physics Letters, Vol. 92, Issue 26 https://doi.org/10.1063/1.2953543	journal	June 2008
Luminescence properties of defects in GaN Reshchikov, Michael A.; Morkoç, Hadis Journal of Applied Physics, Vol. 97, Issue 6 https://doi.org/10.1063/1.1868059	journal	March 2005
Evidence for Two Mg Related Acceptors in GaN Monemar, B.; Paskov, P. P.; Pozina, G. Physical Review Letters, Vol. 102, Issue 23 https://doi.org/10.1103/PhysRevLett.102.235501	journal	June 2009
Efficiency droop in nitride-based light-emitting diodes Piprek, Joachim physica status solidi (a), Vol. 207, Issue 10, p. 2217-2225 https://doi.org/10.1002/pssa.201026149	journal	July 2010
Defect related issues in the “current roll-off” in InGaN based light emitting diodes Monemar, B.; Sernelius, B. E. Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2801704	journal	October 2007
Nonradiative capture and recombination by multiphonon emission in GaAs and GaP Henry, C. H.; Lang, D. V. Physical Review B, Vol. 15, Issue 2 https://doi.org/10.1103/PhysRevB.15.989	journal	January 1977

Similar Records

Highly Nonlinear Defect-Induced Carrier Recombination Rates in Semiconductors.

Journal Article · Thu Feb 28 23:00:00 EST 2013 · Physical Review B · OSTI ID:1145249

RECOMBINATION PROPERTIES OF BOMBARDMENT DEFECTS IN SEMICONDUCTORS

Journal Article · Sat Aug 01 00:00:00 EDT 1959 · Journal of Applied Physics (U.S.) · OSTI ID:4224000

Anomalous carrier-induced dispersion in semiconductor quantum dots.

Journal Article · Sun Jun 01 00:00:00 EDT 2003 · Proposed for publication in Optics (2002), and Optics & Photonics News (December 2002). · OSTI ID:926814

Related Subjects

solar (photovoltaic)
solid state lighting
phonons
materials and chemistry by design
optics
synthesis (novel materials)

Highly nonlinear defect-induced carrier recombination rates in semiconductors

Citation Formats

References (27)

Similar Records

Related Subjects