Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces

Shutthanandan, Vaithiyalingam; Choudhury, Samrat; Manandhar, Sandeep; Kaspar, Tiffany C.; Wang, Chongmin; Devaraj, Arun; Wirth, Brian D.; Thevuthasan, Suntharampilli; Hoagland, Richard G.; Dholabhai, Pratik P.; Uberuaga, Blas P.; Kurtz, Richard J.

doi:10.1002/admi.201700037

Title: Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces

Journal Article · Mon Apr 24 00:00:00 EDT 2017 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201700037· OSTI ID:1378033

^[1]; Choudhury, Samrat ^[2]; Manandhar, Sandeep ^[1]; Kaspar, Tiffany C. ^[3]; Wang, Chongmin ^[1]; Devaraj, Arun ^[3]; Wirth, Brian D. ^[4]; Thevuthasan, Suntharampilli ^[3]; Hoagland, Richard G. ^[2]; Dholabhai, Pratik P. ^[2]; Uberuaga, Blas P. ^[2]; Kurtz, Richard J. ^[5]

Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland WA 99352 USA
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos NM 87545 USA
Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland WA 99352 USA
Department of Nuclear Engineering, University of Tennessee, Knoxville TN 37996 USA
Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland WA 99352 USA

To understand how variations in interface properties such as misfit-dislocation density and local chemistry affect radiation-induced defect absorption and recombination, we have explored a model system of CrxV1-x alloy epitaxial films deposited on MgO single crystals. By controlling film composition, the lattice mismatch with MgO was adjusted so that the misfit-dislocation density varies at the interface. These interfaces were exposed to irradiation and in situ results show that the film with a semi-coherent interface (Cr) withstands irradiation while V film, which has similar semi-coherent interface like Cr, showed the largest damage. Theoretical calculations indicate that, unlike at metal/metal interfaces, the misfit dislocation density does not dominate radiation damage tolerance at metal/oxide interfaces. Rather, the stoichiometry, and the precise location of the misfit-dislocation density relative to the interface, drives defect behavior. Together, these results demonstrate the sensitivity of defect recombination to interfacial chemistry and provide new avenues for engineering radiation-tolerant nanomaterials.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Materials at Irradiation and Mechanical Extremes (CMIME); Pacific Northwest National Laboratory (PNNL), Richland, WA (United States). Environmental Molecular Sciences Laboratory (EMSL)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: AC05-76RL01830

OSTI ID:: 1378033

Report Number(s):: PNNL-SA-107725; 47844; KP1704020

Journal Information:: Advanced Materials Interfaces, Vol. 4, Issue 14; ISSN 2196-7350

Publisher:: Wiley-VCH

Country of Publication:: United States

Language:: English

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Beyond Coherent Oxide Heterostructures: Atomic‐Scale Structure of Misfit Dislocations Dholabhai, Pratik P.; Uberuaga, Blas P. Advanced Theory and Simulations, Vol. 2, Issue 9 https://doi.org/10.1002/adts.201900078	journal	June 2019
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