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Title: Influence of Chemistry and Misfit Dislocation Structure on Dopant Segregation at Complex Oxide Heterointerfaces

Journal Article · · Advanced Theory and Simulations
ORCiD logo [1];  [2];  [2]
  1. Rochester Inst. of Technology, NY (United States). School of Physics and Astronomy
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Abstract Complex oxide heterostructures and thin films have emerged as promising candidates for diverse applications. Lattice mismatch between the two oxides lead to the formation of misfit dislocations, which influence vital material features. Trivalent dopant segregation to misfit dislocations at semi‐coherent oxide heterointerfaces, while not well understood, is anticipated to impact interface‐governed properties. Here, atomistic simulations elucidating the influence of misfit dislocations on dopant segregation at SrTiO 3 /MgO heterointerfaces are reported. SrO‐ and TiO 2 ‐terminated interfaces that have differing misfit dislocation structure were considered for trivalent dopants segregation. At SrO‐terminated interface, dopants tend to segregate toward but not precisely to the heterointerface, whereas at TiO 2 ‐terminated interface, dopants exhibit a thermodynamic preference to accumulate at the heterointerface. Most favorable segregation sites at SrO‐terminated interface are located within the coherent terrace, whereas those at TiO 2 ‐terminated interface are at misfit dislocation intersections. Atomic layer chemistry and the resulting misfit dislocation structure at the heterointerface, along with concomitant strain at the heterointerface due to mismatched dopants, play a critical role in influencing the observed trends for dopant segregation. Overall, the present results offer a fundamental atomic scale perspective of dopant behavior at semi‐coherent complex oxide heterointerfaces and the interplay between dopant chemistry, interface chemistry, and misfit dislocation structure.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Rochester Inst. of Technology, NY (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); LANL Laboratory Directed Research and Development (LDRD) Program; Rochester Inst. of Technology (United States)
Grant/Contract Number:
89233218CNA000001
OSTI ID:
1483545
Alternate ID(s):
OSTI ID: 1472209
Report Number(s):
LA-UR-18-28638
Journal Information:
Advanced Theory and Simulations, Vol. 2, Issue 1; ISSN 2513-0390
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

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Cited By (3)

Beyond Coherent Oxide Heterostructures: Atomic‐Scale Structure of Misfit Dislocations journal June 2019
Atomic-scale structure of misfit dislocations in CeO 2 /MgO heterostructures and thermodynamic stability of dopant–defect complexes at the heterointerface journal January 2019
Semicoherent oxide heterointerfaces: Structure, properties, and implications journal October 2019

Figures / Tables (6)