Modification of electrical properties of topological insulators
Patent
·
OSTI ID:1377859
Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC
- Patent Number(s):
- 9,748,345
- Application Number:
- 15/177,215
- OSTI ID:
- 1377859
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ion beam modification of topological insulator bismuth selenide
Ion beam modification of topological insulator bismuth selenide
Differentiation of surface and bulk conductivities in topological insulator via four-probe spectroscopy
Journal Article
·
Sun Dec 14 23:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:22395532
Ion beam modification of topological insulator bismuth selenide
Journal Article
·
Tue Dec 16 19:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:1184484
Differentiation of surface and bulk conductivities in topological insulator via four-probe spectroscopy
Journal Article
·
Mon Mar 07 19:00:00 EST 2016
· Nano Letters
·
OSTI ID:1256807