Ion beam modification of topological insulator bismuth selenide

Sharma, Peter Anand; Sharma, A. L. Lima; Hekmaty, Michelle A.; Hattar, Khalid Mikhiel; Stavila, Vitalie; Goeke, Ronald S.; Erickson, K.; Medlin, Douglas L.; Brahlek, M.; Oh, S.; Koirala, N.

doi:10.1063/1.4904936

Ion beam modification of topological insulator bismuth selenide

Journal Article · Wed Dec 17 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4904936· OSTI ID:1184484

Sharma, Peter Anand ^[1]; Sharma, A. L. Lima ^[1]; Hekmaty, Michelle A. ^[2]; Hattar, Khalid Mikhiel ^[1]; Stavila, Vitalie ^[2]; Goeke, Ronald S. ^[1]; Erickson, K. ^[2]; Medlin, Douglas L. ^[2]; Brahlek, M. ^[3]; Oh, S. ^[3]; Koirala, N. ^[3]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
The State Univ. of New Jersey, Piscataway, NJ (United States)

In this study, we demonstrate chemical doping of a topological insulator Bi₂Se₃ using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi₂Se₃ thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi₂Se₃, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1184484

Alternate ID(s):: OSTI ID: 22395532

Report Number(s):: SAND--2014-18593J; 540398

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 105; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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