Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness

Shin, Yeong Jae; Kim, Yoonkoo; Kang, Sung -Jin; Nahm, Ho -Hyun; Murugavel, Pattukkannu; Kim, Jeong Rae; Cho, Myung Rae; Wang, Lingfei; Yang, Sang Mo; Yoon, Jong -Gul; Chung, Jin -Seok; Kim, Miyoung; Zhou, Hua; Chang, Seo Hyoung; Noh, Tae Won

doi:10.1002/adma.201602795

Title: Interface Control of Ferroelectricity in an SrRuO₃/BaTiO₃/SrRuO₃ Capacitor and its Critical Thickness

Journal Article · Fri Mar 03 00:00:00 EST 2017 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201602795· OSTI ID:1377858

Shin, Yeong Jae ^[1]; Kim, Yoonkoo ^[2]; Kang, Sung -Jin ^[1]; Nahm, Ho -Hyun ^[1]; Murugavel, Pattukkannu ^[3]; Kim, Jeong Rae ^[1]; Cho, Myung Rae ^[1]; Wang, Lingfei ^[1]; Yang, Sang Mo ^[4]; Yoon, Jong -Gul ^[5]; Chung, Jin -Seok ^[6]; Kim, Miyoung ^[2]; Zhou, Hua ^[7]; Chang, Seo Hyoung ^[8]; Noh, Tae Won ^[1]

Institute for Basic Science (IBS), Seoul, (Republic of Korea); Seoul National Univ., Seoul (Republic of Korea)
Seoul National Univ., Seoul (Republic of Korea)
Indian Institute of Technology Madras, Chennai (India)
Sookmyung Women's Univ., Seoul (Republic of Korea)
Univ. of Suwon, Gyunggi-do (Republic of Korea)
Soongsil Univ., Seoul (Republic of Korea)
Argonne National Lab. (ANL), Lemont, IL (United States)
Pukyong National Univ., Busan (Republic of Korea)

The atomic‐scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. In this study, it is demonstrated that the oxygen pressure during growth plays an important role in controlling the interfacial terminations of SrRuO ₃ /BaTiO ₃ /SrRuO ₃ (SRO/BTO/SRO) ferroelectric (FE) capacitors. The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition method. The top SRO/BTO interface, grown at high (around 150 mTorr), usually exhibits a mixture of RuO ₂ –BaO and SrO–TiO ₂ terminations. By reducing , the authors obtain atomically sharp SRO/BTO top interfaces with uniform SrO–TiO ₂ termination. Using capacitor devices with symmetric and uniform interfacial termination, it is demonstrated for the first time that the FE critical thickness can reach the theoretical limit of 3.5 unit cells.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357; DE‐AC02‐06CH11357

OSTI ID:: 1377858

Alternate ID(s):: OSTI ID: 1401280

Journal Information:: Advanced Materials, Vol. 29, Issue 19; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 46 works

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36 MATERIALS SCIENCE
BaTiO3
ferroelectric critical thickness
ferroelectricity
interface engineering

Title: Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3 Capacitor and its Critical Thickness

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Cited By (12)

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Title: Interface Control of Ferroelectricity in an SrRuO₃/BaTiO₃/SrRuO₃ Capacitor and its Critical Thickness