Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures

Journal Article · Mon Jun 19 04:00:00 EDT 2017 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/aa7589· OSTI ID:1376387

Voyloy, Dimitry ^[1]; Lassiter, Matthew G. ^[2]; Sokolov, Alexei P. ^[2]; Polyzos, Georgios ^[2]; Vlassiouk, Ivan V. ^[2]; Sharma, Jaswinder K. ^[2]; Stehle, Yijing Y. ^[2]; Park, Jaehyeung ^[2]

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1. University of Tennessee, Knoxville (UTK)
2. ORNL

Polymer residue plays an important role in the performance of 2D heterostructured materials. Herein, we study the effect of polymer residual impurities on the electrical properties of graphene–boron nitride planar heterostructures. Large-area graphene (Gr) and hexagonal boron nitride (h-BN) monolayers were synthesized using chemical vapor deposition techniques. Atomic van-der-Waals heterostructure layers based on varied configurations of Gr and h-BN layers were assembled. The average interlayer resistance of the heterojunctions over a 1 cm² area for several planar heterostructure configurations was assessed by impedance spectroscopy and modeled by equivalent electrical circuits. As a result, conductive AFM measurements showed that the presence of polymer residues on the surface of the Gr and h-BN monolayers resulted in significant resistance deviations over nanoscale regions.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• Grant/Contract Number: AC05-00OR22725
• OSTI ID: 1376387
• Alternate ID(s): OSTI ID: 22798687
• Journal Information: Nanotechnology, Journal Name: Nanotechnology Journal Issue: 28 Vol. 28; ISSN 0957-4484
• Publisher: IOP Publishing
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
graphene
heterostructures
hexagonal boron nitride
impedance
interlayer resistance