Atomic layer deposition of Cu( i ) oxide films using Cu( ii ) bis(dimethylamino-2-propoxide) and water

Avila, J. R.; Peters, A. W.; Li, Zhanyong; Ortuño, M. A.; Martinson, A. B.  F.; Cramer, C. J.; Hupp, J. T.; Farha, O. K.

doi:10.1039/c6dt02572b

Atomic layer deposition of Cu( i ) oxide films using Cu( ii ) bis(dimethylamino-2-propoxide) and water

Journal Article · Sun Jan 01 04:00:00 EST 2017 · Dalton Transactions

DOI:https://doi.org/10.1039/c6dt02572b· OSTI ID:1375920

; Peters, A. W.; ; Ortuño, M. A.; ; Cramer, C. J.; Hupp, J. T.; Farha, O. K.

To grow fIlms of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal– oxide films featuring Cu(I).

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Energy Frontier Research Center for Inorganometallic Catalyst Design (ICDC). Center for Light Energy Activated Redox Processes (LEAP); Argonne National Laboratory (ANL)

Sponsoring Organization:: USDOE Office of Science - Energy Frontier Research Center - Argonne-Northwestern Solar Energy Research (ANSER)

DOE Contract Number:: AC02-06CH11357

OSTI ID:: 1375920

Journal Information:: Dalton Transactions, Journal Name: Dalton Transactions Journal Issue: 18 Vol. 46; ISSN 1477-9226; ISSN ICHBD9

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: English

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