Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A.

doi:10.1002/adma.201702557

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

Journal Article · Mon Aug 21 00:00:00 EDT 2017 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201702557· OSTI ID:1375658

Tanaka, Atsunori ^[1]; Choi, Woojin ^[2]; Chen, Renjie ^[2]; ^[3]

Materials Science and Engineering Program University of California San Diego La Jolla CA 92093 USA
Department of Electrical and Computer Engineering University of California San Diego La Jolla CA 92093 USA
Materials Science and Engineering Program University of California San Diego La Jolla CA 92093 USA, Department of Electrical and Computer Engineering University of California San Diego La Jolla CA 92093 USA, Department of NanoEngineering University of California San Diego La Jolla CA 92093 USA

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain‐relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN‐on‐Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack‐free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 ⁷ cm ⁻² achieved to date in GaN‐on‐Si is demonstrated. With these advances, the first vertical GaN metal–insulator–semiconductor field‐effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost‐effective high power device paradigm on an Si CMOS platform are demonstrated

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1375658

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 38 Vol. 29; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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