Profiling the local carrier concentration across a semiconductor quantum dot
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Physics; Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
We profile the local carrier concentration, n, across epitaxial InAs/GaAs quantum dots (QDs) consisting of 3D islands on top of a 2D alloy layer. Here, we use scanning thermoelectric microscopy to measure a profile of the temperature gradient-induced voltage, which is converted to a profile of the local Seebeck coefficient, S. The S profile is then converted to a conduction band-edge profile and compared with Poisson-Schrodinger band-edge simulations. Our combined computational-experimental approach suggests a reduced carrier concentration in the QD center in comparison to that of the 2D alloy layer. The relative roles of free carrier trapping and/or dopant expulsion are discussed.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC); Univ. of Michigan, Ann Arbor, MI (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0000957; FG02-06ER46339
- OSTI ID:
- 1370104
- Alternate ID(s):
- OSTI ID: 1226741
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 19; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 9 works
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