Doping Characterization of InAs/GaAs Quantum Dot Heterostructure by Cross-Sectional Scanning Capacitance Microscopy
- Duke University
- ORNL
In order to better understand dopant incorporation in quantum dot infrared photodetectors, the novel application of cross-sectional scanning capacitance microscopy (SCM) has been used to investigate carrier occupation/distribution in a multi-layer InAs/GaAs quantum dot (QD) heterostructure for different doping techniques. The doping schemes in the QD structure include direct-doping (in InAs QD layers) and remote-doping (in GaAs barrier layers), each with different doping concentrations. The SCM image suggests electrons in direct-doping layers are redistributed due to large band-bending induced by highly-doped, remote-doping layers. The experimental result is supported by a bandstructure calculation using the Schr dinger-Poisson method by Nextnano.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 931119
- Journal Information:
- Applied Physics Letters, Vol. 92, Issue 9; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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