Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.
Conference
·
OSTI ID:1369520
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1369520
- Report Number(s):
- SAND2016-6424C; 643971
- Resource Relation:
- Conference: Proposed for presentation at the 18th International Conference on Metal Organic Vapor Phase Epitaxy held July 10-15, 2016 in San Diego, CA.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Understanding and Predicting GaN Anisotropic Wet Etch Facet Evolution.
Facet Evolution in GaN Chemical Etching for 3D Structures and Optical Microcavities.
Acid-Based Crystallographic Chemical Wet Etching of GaN Nanostructures.
Conference
·
Wed Jun 01 00:00:00 EDT 2016
·
OSTI ID:1369520
+1 more
Facet Evolution in GaN Chemical Etching for 3D Structures and Optical Microcavities.
Conference
·
Sat Oct 01 00:00:00 EDT 2016
·
OSTI ID:1369520
+2 more
Acid-Based Crystallographic Chemical Wet Etching of GaN Nanostructures.
Conference
·
Sat Jun 01 00:00:00 EDT 2019
·
OSTI ID:1369520
+4 more