Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.
Abstract
Abstract not provided.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1369520
- Report Number(s):
- SAND2016-6424C
643971
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Proposed for presentation at the 18th International Conference on Metal Organic Vapor Phase Epitaxy held July 10-15, 2016 in San Diego, CA.
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Tsai, Miao-Chan, Leung, Benjamin, Balakrishnan, Ganesh, and Wang, George T. Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.. United States: N. p., 2016.
Web.
Tsai, Miao-Chan, Leung, Benjamin, Balakrishnan, Ganesh, & Wang, George T. Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.. United States.
Tsai, Miao-Chan, Leung, Benjamin, Balakrishnan, Ganesh, and Wang, George T. 2016.
"Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.". United States. https://www.osti.gov/servlets/purl/1369520.
@article{osti_1369520,
title = {Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.},
author = {Tsai, Miao-Chan and Leung, Benjamin and Balakrishnan, Ganesh and Wang, George T.},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1369520},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jul 01 00:00:00 EDT 2016},
month = {Fri Jul 01 00:00:00 EDT 2016}
}
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