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Title: Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1369520
Report Number(s):
SAND2016-6424C
643971
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 18th International Conference on Metal Organic Vapor Phase Epitaxy held July 10-15, 2016 in San Diego, CA.
Country of Publication:
United States
Language:
English

Citation Formats

Tsai, Miao-Chan, Leung, Benjamin, Balakrishnan, Ganesh, and Wang, George T. Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.. United States: N. p., 2016. Web.
Tsai, Miao-Chan, Leung, Benjamin, Balakrishnan, Ganesh, & Wang, George T. Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.. United States.
Tsai, Miao-Chan, Leung, Benjamin, Balakrishnan, Ganesh, and Wang, George T. 2016. "Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.". United States. https://www.osti.gov/servlets/purl/1369520.
@article{osti_1369520,
title = {Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.},
author = {Tsai, Miao-Chan and Leung, Benjamin and Balakrishnan, Ganesh and Wang, George T.},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1369520}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jul 01 00:00:00 EDT 2016},
month = {Fri Jul 01 00:00:00 EDT 2016}
}

Conference:
Other availability
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