Layer transfer of bulk gallium nitride by controlled spalling

Bedell, S. W.; Lauro, P.; Ott, J. A.; Fogel, K.; Sadana, D. K.

doi:10.1063/1.4986646

Layer transfer of bulk gallium nitride by controlled spalling

Journal Article · Tue Jul 11 00:00:00 EDT 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4986646· OSTI ID:1369082

Bedell, S. W.; Lauro, P.; Ott, J. A.; Fogel, K.; Sadana, D. K.

Successful wafer-scale layer transfer from high-quality 2-in. diameter bulk gallium nitride substrates was demonstrated using the Controlled Spalling technique. The crystal quality of both the as-fractured bulk substrate and the spalled GaN film was assessed using transmission electron microscopy analysis, and the defect density was below the detection limit (mid 107 cm−2) for both samples. By using the experimentally determined critical conditions for tensile stress and thickness of the Ni stressor layer, an effective fracture toughness KIC of 1.7 MPa m could be calculated for [0001] fracture using the Suo and Hutchinson mechanical model. The resulting in-plane contraction of the GaN film after spalling permitted a novel method for measuring film strain without knowledge of the elastic properties of the material. This was used to measure the Raman E2(high) peak shift coefficient of Δω(cm−1) = 1411ε which, when converted to a stress coefficient (2.95 cm−1/GPa), was in agreement with only one other literature value.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1369082

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 122; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

References (18)

Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic Shahrjerdi, Davood; Bedell, Stephen W.; Bayram, Can Advanced Energy Materials, Vol. 3, Issue 5 https://doi.org/10.1002/aenm.201200827	journal	December 2012
Steady-state cracking in brittle substrates beneath adherent films Suo, Zhigang; Hutchinson, John W. International Journal of Solids and Structures, Vol. 25, Issue 11 https://doi.org/10.1016/0020-7683(89)90096-6	journal	January 1989
New applications advisable for gallium nitride Pearton, S. J.; Abernathy, C. R.; Overberg, M. E. Materials Today, Vol. 5, Issue 6 https://doi.org/10.1016/S1369-7021(02)00636-3	journal	June 2002
Reliability studies of vertical GaN devices based on bulk GaN substrates Kizilyalli, Isik C.; Bui-Quang, P.; Disney, D. Microelectronics Reliability, Vol. 55, Issue 9-10 https://doi.org/10.1016/j.microrel.2015.07.012	journal	August 2015
Extremely Flexible Nanoscale Ultrathin Body Silicon Integrated Circuits on Plastic Shahrjerdi, Davood; Bedell, Stephen W. Nano Letters, Vol. 13, Issue 1, p. 315-320 https://doi.org/10.1021/nl304310x	journal	December 2012
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene Kim, Jeehwan; Bayram, Can; Park, Hongsik Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5836	journal	September 2014
Hardness and fracture toughness of bulk single crystal gallium nitride Drory, M. D.; Ager, J. W.; Suski, T. Applied Physics Letters, Vol. 69, Issue 26 https://doi.org/10.1063/1.117865	journal	December 1996
Facet roughness analysis for InGaN/GaN lasers with cleaved facets Stocker, D. A.; Schubert, E. F.; Grieshaber, W. Applied Physics Letters, Vol. 73, Issue 14 https://doi.org/10.1063/1.122172	journal	October 1998
Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN Rogers, D. J.; Hosseini Teherani, F.; Ougazzaden, A. Applied Physics Letters, Vol. 91, Issue 7 https://doi.org/10.1063/1.2770655	journal	August 2007
Thermal stress in GaN epitaxial layers grown on sapphire substrates Kozawa, T.; Kachi, T.; Kano, H. Journal of Applied Physics, Vol. 77, Issue 9 https://doi.org/10.1063/1.359465	journal	May 1995
Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC Davydov, V. Yu.; Averkiev, N. S.; Goncharuk, I. N. Journal of Applied Physics, Vol. 82, Issue 10 https://doi.org/10.1063/1.366310	journal	November 1997
Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes Iida, Daisuke; Kawai, Syunsuke; Ema, Nobuaki Applied Physics Letters, Vol. 105, Issue 7 https://doi.org/10.1063/1.4893757	journal	August 2014
Layer transfer by controlled spalling Bedell, Stephen W.; Fogel, Keith; Lauro, Paul Journal of Physics D: Applied Physics, Vol. 46, Issue 15 https://doi.org/10.1088/0022-3727/46/15/152002	journal	March 2013
Strain-related phenomena in GaN thin films Kisielowski, C.; Krüger, J.; Ruvimov, S. Physical Review B, Vol. 54, Issue 24 https://doi.org/10.1103/PhysRevB.54.17745	journal	December 1996
Kerf-Less Removal of Si, Ge, and III–V Layers by Controlled Spalling to Enable Low-Cost PV Technologies Bedell, Stephen W.; Shahrjerdi, Davood; Hekmatshoar, Bahman IEEE Journal of Photovoltaics, Vol. 2, Issue 2 https://doi.org/10.1109/JPHOTOV.2012.2184267	journal	April 2012
Stress Adjustment and Bonding of H-Implanted 2 in. Freestanding GaN Wafer: The Concept of Double-Sided Splitting Moutanabbir, O.; Senz, S.; Scholz, R. Electrochemical and Solid-State Letters, Vol. 12, Issue 4 https://doi.org/10.1149/1.3066081	journal	January 2009
Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes Chung, Roy Byung-Kyu; Kim, Donghyun; Lim, Sung-Keun Applied Physics Express, Vol. 6, Issue 11 https://doi.org/10.7567/APEX.6.111005	journal	November 2013
Vertical Light-Emitting Diode Fabrication by Controlled Spalling Bedell, Stephen W.; Bayram, Can; Fogel, Keith Applied Physics Express, Vol. 6, Issue 11 https://doi.org/10.7567/APEX.6.112301	journal	November 2013

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