Controlled Spalling of 4H Silicon Carbide with Investigated Spin Coherence for Quantum Engineering Integration

Horn, Connor P.; Wicker, Christina; Wellisz, Antoni; Zeledon, Cyrus; Nittala, Pavani Krishna; Heremans, F. Joseph; Awschalom, David D.; Guha, Supratik

doi:10.1021/acsnano.4c10978

Controlled Spalling of 4H Silicon Carbide with Investigated Spin Coherence for Quantum Engineering Integration

Journal Article · Tue Oct 29 00:00:00 EDT 2024 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.4c10978· OSTI ID:2475438

^[1]; Wicker, Christina ^[1]; Wellisz, Antoni ^[2]; Zeledon, Cyrus ^[2]; ^[3]; ^[1]; ^[1]; ^[1]

University of Chicago, IL (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
University of Chicago, IL (United States)
University of Chicago, IL (United States); Micron Technology, Inc., Boise, ID (United States)

We detail scientific and engineering advances which enable the controlled spalling and layer transfer of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4HSiC’s properties, including high thermal conductivity and a wide bandgap, make it an ideal semiconductor for power electronics. Moreover, 4H-SiC is an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking. Because 4H-SiC substrates are expensive (due to long growth times and limited yield), techniques for removal and transfer of bulk-quality films are desirable for substrate reuse and integration of the separated films. In this work, we utilize updated approaches for stressor layer thickness control and spalling crack initiation to demonstrate controlled spalling of 4H-SiC, the highest fracture toughness crystal spalled to date. We achieve coherent spin control of neutral divacancy (VV⁰) qubit ensembles and measure a quasi-bulk spin T₂ of 79.7 μs in the spalled films.

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Research Organization:: University of Chicago, IL (United States)

Sponsoring Organization:: Air Force Office of Scientific Research; USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 2475438

Alternate ID(s):: OSTI ID: 2476930

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 45 Vol. 18; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Controlled Spalling of 4H Silicon Carbide with Investigated Spin Coherence for Quantum Engineering Integration

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