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Determination of the resistivity anisotropy of orthorhombic materials via transverse resistivity measurements

Journal Article · · Review of Scientific Instruments
DOI:https://doi.org/10.1063/1.4978908· OSTI ID:1368579
Measurements of the resistivity anisotropy can provide crucial information about the electronic structure and scattering processes in anisotropic and low-dimensional materials, but quantitative measurements by conventional means often suffer very significant systematic errors. Here we describe a novel approach to measuring the resistivity anisotropy of orthorhombic materials, using a single crystal and a single measurement that is derived from a π/4 rotation of the measurement frame relative to the crystallographic axes. In this new basis, the transverse resistivity gives a direct measurement of the resistivity anisotropy, which combined with the longitudinal resistivity also gives the in-plane elements of the conventional resistivity tensor via a 5-point contact geometry. In conclusion, this is demonstrated through application to the charge-density wave compound ErTe3, and it is concluded that this method presents a significant improvement on existing techniques, particularly when measuring small anisotropies.
Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-76SF00515
OSTI ID:
1368579
Alternate ID(s):
OSTI ID: 1361792
Journal Information:
Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 4 Vol. 88; ISSN 0034-6748; ISSN RSINAK
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (2)

Direct measurement of anisotropic conductivity in a nanolaminated (Mn 0.5 Cr 0.5 ) 2 GaC thin film journal August 2019
Divergence of the quadrupole-strain susceptibility of the electronic nematic system YbRu 2 Ge 2 journal March 2019

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